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GaN HFET MMICs with integrated Schottky-diode for highly efficient digital switch-mode power amplifiers at 2 GHz

Published online by Cambridge University Press:  19 April 2011

Stephan Maroldt ,
Rüdiger Quay ,
Christian Haupt ,
Rudolf Kiefer ,
Dirk Wiegner  and
Oliver Ambacher
Stephan Maroldt*
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Rüdiger Quay
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Christian Haupt
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Rudolf Kiefer
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Dirk Wiegner
Affiliation:
Alcatel-Lucent Bell Labs, Radio Communications-Department, ZFZ/RA4, Stuttgart, Germany.
Oliver Ambacher
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
*
Corresponding author: S. Maroldt Email: [email protected]
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Abstract

This work describes the integration of Schottky diodes into fast GaN MMIC process technology suitable for the realization of switch-mode power amplifier core chips for class-S operation at 2 GHz. With the demonstration of this technology, the so-called third-quadrant issue, which reduces the efficiency in band pass-Δ-Σ class-S operation can be diminished on device level. Compared to a hybrid diode assembly, the broadband properties of the amplifier module with on-chip-integrated diode can be improved by the reduction of parasitic losses. The GaN heterostructure field effect transistors (HFETs) with integrated series diode show a cut-off frequency of 28 GHz with drain breakdown voltages exceeding −100 and +100 V and comparable large signal performance to conventional GaN HFETs at 10 GHz. MMIC core chips for class-D and class-S switch-mode power amplifier modules are demonstrated for the operation at mobile communication frequencies between 0.45 and 2 GHz and signal bit rates up to 8 Gbps. The circuits yield broadband output power levels between 4 and 9 W with efficiencies of up to 80%.

Keywords

power amplifierswitch modegallium nitridemobile communicationsintegrated diodeMMICclass-S
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 3 , Special Issue 3: Special Issue on European Microwave Week 2010 , June 2011 , pp. 319 - 327
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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References

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