Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-19T02:03:07.206Z Has data issue: false hasContentIssue false
  • English
  • Français

Compact RF non-linear electro thermal model of SiGe HBT for the design of broadband ADC's

Published online by Cambridge University Press:  29 August 2012

Alaa Saleh ,
Abdel Kader El Rafei ,
Mountakha Dieng ,
Tibault Reveyrand ,
Raphael Sommet ,
Jean-Michel Nebus  and
Raymond Quere
Alaa Saleh*
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Abdel Kader El Rafei
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Mountakha Dieng
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Tibault Reveyrand
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Raphael Sommet
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Jean-Michel Nebus
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Raymond Quere
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
*
Corresponding author: Alaa Saleh Email: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

The design of high speed integrated circuits heavily relies on circuit simulation and requires compact transistor models. This paper presents a non-linear electro-thermal model of SiGe heterojunction-bipolar transistor (HBT). The non-linear model presented in this paper uses a hybrid π topology and it is extracted using IV and S-parameter measurements. The thermal sub-circuit is extracted using low-frequency S-parameter measurements. The model extraction procedure is described in detail. It is applied here to the modeling of npn SiGe HBTs. The proposed non-linear electro-thermal model is expected to be used for the design of high-speed electronic functions such as broadband analog digital converters in which both electrical and thermal aspects are engaged. The main focus and contribution of this paper stands in the fact that the proposed non-linear model covers wideband-frequency range (up to 65 GHz).

Keywords

ModellingSimulation and Characterizations of devices and CircuitsMicrowave Measurements
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 4 , Issue 6 , December 2012 , pp. 569 - 578
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Cressler, J.D.: Silicon–germanium as an enabling technology for extreme environment electronics. IEEE Trans. Devices Mater. Reliab., 10 (2010), 437–448.Google Scholar
[2]De Graaff, H.C.: State of the art in compact modelling with emphasis on bipolar RF circuit design, In Delft University of Technology. Solid-State Device Research Conf., September 1997, 14–23.Google Scholar
[3]Bhattacharyya, A.; Fregonese, S.; Maneux, C.; Zimmer, T.: Modeling of SiGe spike mono emitter HBT with HICUM in static and dynamic operations, In IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011, 53–56.Google Scholar
[4]Schroter, M.: HICUM/Level0 - a simplified compact bipolar transistor model Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002, 112–115.Google Scholar
[5]Bo, Han.; Shoulin, Li.; Jiali, Cheng.; Qiuyan, Yin.; Jianjun, Gao.: MEXTRAM model based SiGe HBT large-signal modeling. Journal of Semiconductors 2010, 31 (31), 104004-1–104004-6.CrossRefGoogle Scholar
[6]Xiong, A. et al. : An electrothermal model of high power HBTs for high efficiency L/S band amplifiers, In Microwave Integrated Circuit Conf., 2008, 318–321.Google Scholar
[7]Jardel, O. et al. : An electrothermal model for GaInP/GaAs power HBTs with enhanced convergence capabilities, In European Microwave Integrated Circuits Conf., 2006, 296–299.Google Scholar
[8]Decoutere, S. et al. : Advanced process modules and architectures for half-terahertz SiGe:C HBTs, In Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2009, 9–16.Google Scholar
[9]Paasschens, J.C.J.; Toorn, R.V.D.; Kloosterman, W.: The Mextram Bipolar Transistor Model level 504.6. Koninklijke Philips Electronics NV 2000/2005, March 2005.Google Scholar
[10]Schroeter, M.: RF–Modeling of Bipolar Transistors with HICUM, Chair for Electron Devices and Integrated Circuits, Lausanne University of Technology, Dresden, Germany, 2000.Google Scholar
[11]El Rafei, A.; Sommet, R.; Quere, R.: Electrical measurement of the thermal impedance of bipolar transistors. IEEE Electron Device Lett., 31 (9) (2010), 939–941.Google Scholar
[12]Sahoo, A.K.; Fregonese, S.; Zimmer, T.; Malbert, N.: Thermal impedance modelling of sige hbts from low frequency small signal measurements. IEEE Electron Device Lett., 32 (2011), 119–121.Google Scholar
[13]Saleh, A. et al. : 40 ns pulsed I/V setup and measurement method applied to InP HBT characterisation. Electron. Lett., 45 (2009), 286–287.Google Scholar
[14]El Rafei, A. et al. : DC (10 Hz) to RF (40 GHz) output conduction extraction by S-parameters measurements for in-depth characterization of AlInN/GaN HEMTS, focusing on low frequency dispersion effects, In EuMW2011, Manchester, October 2011, 5–8.Google Scholar
[15]Reveyrand, T.; Mallet, A.; Nebus, J.M.; Vanden Bossche, M.: Calibrated measurements of waveforms at internal nodes of MMICs with a LSNA and high impedance probes, In 62nd ARFTG Conf. Digest, December 2003, 71–76.Google Scholar