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Feature-Scale Simulations of Particulate Slurry Flows in Chemical Mechanical Polishing by Smoothed Particle Hydrodynamics

Published online by Cambridge University Press:  03 June 2015

Dong Wang
Affiliation:
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 201203, China
Sihong Shao*
Affiliation:
LMAM and School of Mathematical Sciences, Peking University, Beijing 100871, China
Changhao Yan
Affiliation:
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 201203, China
Wei Cai
Affiliation:
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 201203, China Department of Mathematics and Statistics, University of North Carolina at Charlotte, Charlotte, NC 28223, USA
Xuan Zeng*
Affiliation:
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 201203, China
*
Corresponding author.Email:[email protected]
Corresponding author.Email:[email protected]
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Abstract

In this paper, the mechanisms of material removal in chemical mechanical polishing (CMP) processes are investigated in detail by the smoothed particle hydrodynamics (SPH) method. The feature-scale behaviours of slurry flow, rough pad, wafer defects, moving solid boundaries, slurry-abrasive interactions, and abrasive collisions are modelled and simulated. Compared with previous work on CMP simulations, our simulations incorporate more realistic physical aspects of the CMP process, especially the effect of abrasive concentration in the slurry flows. The preliminary results on slurry flow in CMP provide microscopic insights on the experimental data of the relation between the removal rate and abrasive concentration and demonstrate that SPH is a suitable method for the research of CMP processes.

Type
Research Article
Copyright
Copyright © Global Science Press Limited 2014

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