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Direct Determination of Stress in a Thin Film Deposited on a Single-Crystal Substrate from an X-Ray Topographic Image

Published online by Cambridge University Press:  06 March 2019

Wayne S. Berry
Wayne S. Berry*
Affiliation:
IBM General Technology Division, Essex Junction, Vermont 05452
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Abstract

X-ray topography is one of several methods used by the semiconductor industry to measure stress of thin films deposited on single crystal substrates. A procedure to determine stress values directly from the X-ray topographic image by measuring the separation of the Kα1-Kα2 X-ray peaks is reviewed. Although less sensitive than the single-crystal technique, it has been found applicable to monitor stress levels in films such as CVD silicon nitride on silicon wafers. This technique may also be used to quantify the plastic deformation of wafers that is induced by semiconductor processes.

Type
V. X-Ray Stress Determination, Position Sensitive Detectors, Fatigue and Fracture Characterization
Information
Advances in X-Ray Analysis , Volume 26: Thirty-First Annual Conference on Applications of X-ray Analysis, August 1-6, 1982 , 1982 , pp. 255 - 258
Copyright
Copyright © International Centre for Diffraction Data 1982

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References

1. Hearn, E. W., Stress measurements in thin films deposited on single-crystal substrates through topographic techniques, Advances in X-ray Analysis, 20:273–2 (1977).Google Scholar