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  1. Home
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  3. Nanoscale MOS Transistors
  • Cited by 162
Publisher:
Cambridge University Press
Online publication date:
August 2011
Print publication year:
2011
Online ISBN:
9780511973857
DOI:
https://doi.org/10.1017/CBO9780511973857
Subjects:
Physics and Astronomy, Condensed Matter Physics, Nanoscience and Mesoscopic Physics, Engineering, Electronic, Optoelectronic Devices, and Nanotechnology
Information

Book description

Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include:Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materialsAll the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling frameworkPredictive capabilities of device models, discussed with systematic comparisons to experimental results

Reviews

'In this comprehensive text, physicists and electrical engineers will find a thorough treatment of semiclassical carrier transport in the context of nanoscale MOSFETs. With only a very basic background in mathematics, physics, and electronic devices, the authors lead readers to a state-of-the-art understanding of the advanced transport physics and simulation methods used to describe modern transistors.'

Mark Lundstrom - Purdue University

'This is the most pedagogical and comprehensive book in the field of CMOS device physics I have ever seen.'

Thomas Skotnicki - STMicroelectronics

'This is a modern and rigorous treatment of transport in advanced CMOS devices. The detailed and complete description of the models and the simulation techniques makes the book fully self sufficient.'

Asen Asenov - University of Glasgow

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