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  1. Home
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  3. Fundamentals of Carrier Transport
  • Cited by 674
Publisher:
Cambridge University Press
Online publication date:
March 2010
Print publication year:
2000
Online ISBN:
9780511618611
DOI:
https://doi.org/10.1017/CBO9780511618611
Subjects:
Physics and Astronomy, Condensed Matter Physics, Nanoscience and Mesoscopic Physics, Engineering, Electronic, Optoelectronic Devices, and Nanotechnology
Information

Book description

Fundamentals of Carrier Transport is an accessible introduction to the behaviour of charged carriers in semiconductors and semiconductor devices. It is written specifically for engineers and students without an extensive background in quantum mechanics and solid-state physics. This second edition contains many new and updated sections, including a completely new chapter on transport in ultrasmall devices. The author begins by covering a range of essential physical principles. He then goes on to cover both low- and high-field transport, scattering, transport in devices, and transport in mesoscopic systems. The use of Monte Carlo simulation methods is explained in detail. Many homework exercises are provided and there are a variety of worked examples. The book will be of great interest to graduate students of electrical engineering and applied physics. It will also be invaluable to practising engineers working on semiconductor device research and development.

Reviews

‘The book will be of great interest to graduate students of electrical engineering and applied physics. it will be invaluable to practising engineers working on semiconductor device research and development.’

Source: INSPEC

‘The book is beautifully produced, the author’s style is lucid and easy to read and the arguments and physical insights as clear and helpful as one could wish … an excellent text on transport theory and I recommend it to physicists and engineers alike.’

F. W. Sheard Source: Contemporary Physics

' … not only fascinating but … endlessly readable … will stand for a long while as an accessible introduction.'

Source: Current Engineering Practice

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