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  3. Electrons and Phonons in Semiconductor Multilayers
  • Cited by 25
Publisher:
Cambridge University Press
Online publication date:
September 2009
Print publication year:
2009
Online ISBN:
9780511581496
DOI:
https://doi.org/10.1017/CBO9780511581496
Subjects:
Physics and Astronomy, Condensed Matter Physics, Nanoscience and Mesoscopic Physics, Engineering, Electronic, Optoelectronic Devices, and Nanotechnology
Information

Book description

Advances in nanotechnology have generated semiconductor structures that are only a few molecular layers thick, and this has important consequences for the physics of electrons and phonons in such structures. This book describes in detail how confinement of electrons and phonons in quantum wells and wires affects the physical properties of the semiconductor. This second edition contains four new chapters on spin relaxation, based on recent theoretical research; the hexagonal wurtzite lattice; nitride structures, whose novel properties stem from their spontaneous electric polarization; and terahertz sources, which includes an account of the controversies that surrounded the concepts of Bloch oscillations and Wannier-Stark states. The book is unique in describing the microscopic theory of optical phonons, the radical change in their nature due to confinement, and how they interact with electrons. It will interest graduate students and researchers working in semiconductor physics.

Reviews

Review from the first edition:‘Electrons and Phonons in Semiconductor Multilayers achieves its purpose commendably and fills a gap in the market. The book is well-produced, with a good index, and is reasonably priced.’

A. M. Fox Source: Optics and Photonics News

Review from the first edition:‘… a specialist’s vade mecum, including an immense amount of valuable detail.’

Peter J. Price Source: Physics Today

‘The reviewed book is one of those rare pleasant events. … The book should be of interest to those dealing with the investigations and applications of low-dimensional semiconductor structures.’

Yuri G. Peisakhovich Source: Materials Research Bulletin

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