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2 - Electrons in potential wells and in solids

from Part I - Basics

Published online by Cambridge University Press:  23 November 2018

Sergey V. Gaponenko
Affiliation:
National Academy of Sciences of Belarus
Hilmi Volkan Demir
Affiliation:
Nanyang Technological University, Singapore
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Publisher: Cambridge University Press
Print publication year: 2018

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References

Further reading

Chichibu, S., Mizutani, T., Shioda, T., et al. (1997). Urbach−Martienssen tails in a wurtzite GaN epilayer. Appl Phys Lett, 70(25), 34403442.Google Scholar
Harrison, W. A. (2000). Applied Quantum Mechanics. World Scientific.Google Scholar
Klingshirn, C. F. (2012). Semiconductor Optics. Springer Science & Business Media.CrossRefGoogle Scholar
Klingshirn, C. F., Waag, A., Hoffmann, A., and Geurts, J. (2010). Zinc Oxide: From Fundamental Properties Towards Novel Applications. Springer Science & Business Media.Google Scholar
Levinshtein, M. E., Rumyantsev, S. L., and Shur, M. S. (2001). Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe. John Wiley & Sons.Google Scholar
Miller, D. A. B. (2008). Quantum Mechanics for Scientists and Engineers. Cambridge University Press.CrossRefGoogle Scholar
Peyghambarian, N., Koch, S. W., and Mysyrowicz, A. (1994). Introduction to Semiconductor Optics. Prentice-Hall, Inc.Google Scholar
Schmitt-Rink, S., Haug, H., and Mohler, E. (1981). Derivation of Urbach’s rule in terms of exciton interband scattering by optical phonons. Phys Rev B, 24(10), 6043.Google Scholar
Yariv, A. (2013). An Introduction to Theory and Applications of Quantum Mechanics. Courier Corporation.Google Scholar
Yu, P. Y., and Cardona, M. (1996). Fundamentals of Semiconductor Optics. Springer.CrossRefGoogle Scholar

References

Gaponenko, S. V. (2010). Introduction to Nanophotonics. Cambridge University Press.Google Scholar
Klingshirn, C. F. (2004). Semiconductor Quantum Structures. Part 2: Optical Properties. Springer Science & Business Media.Google Scholar
Madelung, O. (2004). Semiconductors: Data Handbook. 3rd edition. Springer.Google Scholar
Muth, J. F., Lee, J. H., Shmagin, I. K., et al. (1997). Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements. Appl Phys Lett, 71(18), 25722574.Google Scholar
Pelá, R. R., Caetano, C., Marques, M., et al. (2011). Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach. Appl Phys Lett, 98(15), 151907.Google Scholar

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