We systematically study the Cherenkov optical emission by a nonrelativistic modulated source crossing 3D dispersive metamaterial. It is found that the interference of the field produced by the modulated source with the periodic plasmonic-polariton excitations leads to the specific interaction in the frequency range where the dispersive refractive index of a metamaterial is negative. Such resonance considerably modifies the spatial structure of the Cherenkov fieldand the reversed Cherenkov emission. In our study parameters of metamaterial and modulated source are fixed while the frequency spectrum of the plasmonic excitations is formed due to the fields interplay in the frequency domain.

The conventional method to fabricate porous silicon with n-type substrates requires light assisted generation of holes used in the electrochemical reaction. Recently, two different methods have been proposed to fabricate some similar structures: Hall effect [1] and lateral electrical field [2]. Hall effect assisted etching involves the application of a perpendicular electric and magnetic field to achieve the concentration of holes at the HF/silicon interface to assist the electrochemical reaction, while the other involves the application of a lateral electrical field across the silicon wafer. In this work, the electrochemical etching of high resistivity n-type silicon wafers under the combined effect of magnetic and lateral electrical field to produce photoluminescent macroporous structures under dark conditions, is reported. A lateral gradient in pore sizes as well as in light emission is observed. Optical and structural properties were studied for their possible applications as a biosensor.