Epitaxial graphene (EG) has attracted considerable interest because of its extraordinary properties and ability to be synthesized on the wafer scale. These attributes have enabled EG to be applied in field-effect transistors with extrinsic operating frequencies in the hundreds-of-gigahertz range. Although the quality of EG grown on SiC has improved, there are still obstacles, such as low carrier mobility and large-area thickness nonuniformity, that limit applications in a wide range of truly wafer-scale technologies. In this article, key elements of epitaxial graphene synthesis are highlighted and discussed with regard to impacts on large-area uniformity, structure, and electrical properties. The effects of specific components such as growth-reactor design and substrate quality are examined in an effort to provide a pathway for future advancements in EG production. Finally, key future directions for research in EG are briefly discussed.
