In this paper, we report on the well-aligned zinc oxide (ZnO) nanorods synthesized on Ag buffer layer/glass substrate using a modified hydrothermal method, which adopts the strategy of Ag layer facing down. The effects of position, thickness, and annealing temperature of Ag layer on the shape of ZnO nanocrystals were systematically investigated. It was found that the diameter and length of ZnO nanorods decrease with the Ag layer height up to 12 mm, above which no obvious decrease was observed. Oppositely, the density, diameter, and length of ZnO rods all increase with an increase in the Ag layer thickness, except that the length becomes constant above a critical thickness of 60 nm. In addition, when the Ag layer annealing temperature increases from 300 to 400 °C, the nanorod density decreases, the diameter increases, and the length remains nearly invariable, respectively. Surprisingly, randomly inclined nanorods with two different diameters dispersedly coexist on the Ag layer that was annealed at 500 °C. This work may provide an effective approach for the shape control in ZnO-based applications.

A ferroelectric memory diodes that consists of Au/Pb(Zr0.52Ti0.48)O3/Bi4Ti3O12/p-Si multilayer configuration was fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the electrical characteristics of the ferroelectric film system were investigated. The polarization-voltage curve of Pb(Zr0.52Ti0.48)O3/Bi4Ti3O12 thin films system had an asymmetry hysteresis loop with Pr=20μC/cm2 and Ec=48 kV/cm, and the decay in remnant polarization was only 10% after 109 switching cycles. The C-V curve and the I-V curve showed memory effects derived from the ferroelectric polarization of PZT/BIT films. The current density was 6.7×10−8A/cm2 at a voltage of +4V, and the conductivity behavior is discussed. The results suggested that the growth of the BIT ferroelectric layer is helpful to good ferroelectric properties, fatigue and capacitance retention characteristics.

The current status of GaN crystal growth using the Sublimation Sandwich Technique is discussed in the paper. We use modeling to analyze gas dynamics in the reactor and the supply of the main gaseous species into the growth cell under growth conditions used in experiments. Important features of growth process — non-equilibrium cracking of ammonia, partial sticking of ammonia at the growing surface and kinetic limitation of GaN thermal decomposition — are taken into account in the model. Growth is carried out on sapphire and 6H-SiC substrates in ammonia atmosphere using a Ga/GaN mixture as the group-III element source. Single crystals of GaN of size 15×15 mm and up to 0.5 mm thick are normally grown with the optimized growth rates of 0.25-0.35 mm/h. The GaN crystals are characterized by photoluminescence, by the Color Cathodoluminescence Scanning Electron Microscopy technique, by differential double-crystal and triple-crystal X-ray diffractometry, and by electron paramagnetic resonance. Mechanisms of sublimation growth of GaN and physical limitations of the growth process are discussed.