Search

We report on the fabrication and characterization of GaN/4H-SiC n-p-n heterojunction bipolar transistors (HBTs). The device structure consists of an n-SiC collector, p-SiC base, and selectively grown n-GaN emitter. The HBTs were grown using metalorganic chemical vapor deposition on SiC substrates. Selective GaN growth through a SiO2 mask was used to avoid damage that would be caused by reactive ion etching. In this report, we demonstrate common base transistor operation with a modest dc current gain of 15 at room temperature and 3 at 300°C.

Search Results

Refine search

Refine search

Actions for selected content:

1 results

A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

Search Results

Refine search

Refine search

Actions for selected content:

Save Search

1 results

A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C