We demonstrate a laser diode end-pumped helium gas-cooled multislab Nd:glass laser amplifier. The design and thermal management of the proposed laser amplifier are discussed. The thermally induced wavefront aberration of the slabs was also measured and compared with simulation results. A small-signal single-pass longitudinal gain of 1.8 was measured with a pump energy of 7.3 J. With an injected seed energy of 0.6 mJ, the output energy from the amplifier reached 0.5 J at 0.2 Hz and 0.43 J at 0.5 Hz in a multipass extraction geometry, thus demonstrating the feasibility of diode-pumped, high-energy lasers with direct gas cooling.

Laser drivers are an enabling factor to inertial confinement fusion, because laser diodes must be used instead of flash lamps. We discuss the limitations of laser diode arrays and show what steps the industry is taking. The pump power requirements of large-scale projects such as LIFE or HiPER are within reach of semiconductor laser diode assemblies. Pulsed light output powers per laser bars have been around 300 W per bar, as in the Jenoptik 940 nm bars previously used for pumping the Yb:YAG slabs in the DiPOLE project. By redesigning the semiconductor laser structures 500 W per bar is now commercially available for 808, 880 and 940 nm pump wavelengths. The construction of one inertial fusion power plant will require an amount of semiconductor laser chips in excess of the current annual production by two orders of magnitude. This adds to the engineering task of improving the device characteristics a challenge to production capacity. While the industry benefits from the recent boost in solid-state lighting that acts as a technology driver, cooperation between manufacturers will be imperative, and to this end we propose standardization efforts.

A theoretical approach for an optical lens tip on a single-mode fiber end to improve power coupling from laser diode is presented in this work. The lens shape considered here is an ellipsoid. Based on scalar diffraction and Gaussian mode shapes for the laser and fiber fields, a theoretical model is developed to predict the coupling performance of this microlens. Theoretically, both a high coupling efficiency up to 77% and a large alignment tolerance for 10% off-peak are achieved. The proposed method facilitates mass production to achieve a high-yield and high-coupling efficiency that is suitable to be used in the commercial fiber transmission industry.

We used single crystals of GaN, obtained from high-pressure synthesis, as substrates for Metalorganics Vapor Phase Epitaxy growth of violet and UV laser diodes. The use of high-quality bulk GaN leads to the decrease of the dislocation density to the low level of 105 cm−2, i.e. two orders of magnitude better than typical for the Epitaxial Lateral Overgrowth laser structures fabricated on sapphire. The low density and homogeneous distribution of defects in our structures enables the realization of broad stripe laser diodes. We demonstrate that our laser diodes, having 15 μm wide stripes, are able to emit 1.3-1.9 W per facet (50% reflectivity) in 30 ns long pulses. This result, which is among the best ever reported for nitride lasers, opens the path for the development of a new generation of high power laser diodes.

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.