A high-directivity switched-beam antenna in the V-band is presented and includes a circularly-polarized transmit-array realized in a low-cost printed technology associated with a focal source array integrated on high-resistivity silicon. The measurements show a maximum gain of 12.1 dBi, a 3-dB gain-bandwidth of 57.8–70 GHz, and an axial ratio below 5 dB. The antenna exhibits five beams pointing from −22° to +23° in one plane, its size of 25 × 25 × 10 mm3 is compatible with the integration in different multimedia communication devices.

This paper describes the analysis and the design of an integrated antenna on 0.13 µm SiGe BICMOS technology. A non-resonant dipole antenna integrated on SiGe is electromagnetically coupled to a radiating element reported on a printed circuit board (PCB) substrate. This integrated solution, also compatible with system in package (SIP) concept, provides significant improvements with respect to direct System On Chip (SoC) integration. The main objective of this SIP antenna lies on the optimization of integrated millimeter wave front-ends modules, considering the immediate antenna environment (especially the lossy substrate and technological dielectric/metallic levels), in order to achieve performances compatible with short range radar specifications at 79–81 GHz. One solution, using a RT/Rogers Duroid 6006 PCB (er = 6, thickness h = 127 µm), is presented, providing a 2.93 dBi gain, and 45% radiation efficiency antenna.