CheeWee Liu
Guest Editor for this issue of MRS Bulletin
Electrical Engineering Department, National Taiwan University, Taiwan; email [email protected].
Liu is a professor with the Department of Electrical Engineering at National Taiwan University (NTU) and a senior researcher with National Nano Device Laboratories in Taiwan. He received his BS (1985) and MS (1987) degrees in electrical engineering from NTU and his PhD degree in electrical engineering (1994) from Princeton University. His research interests include 3D Ge field-effect transistors, through-Si-vias, solar cells (n-wafer and CIGS), and group IV photonics. He is the inventor of MIS light-emitting diodes and detectors. He owns a record high mobility of 2 × 106 cm2/Vs in strained Si at low temperature.
Mikael Östling
Guest Editor for this issue of MRS Bulletin
School of Information and Communication Technology, KTH Royal Institute of Technology, Sweden; email [email protected].
Östling is department head of Integrated Devices and Circuits and a professor in solid-state electronics at KTH Royal Institute of Technology. He received his MSc and PhD degrees from Uppsala University. Previously, he was the dean of the School of Information and Communication Technology at KTH (2004–2012). His research interests are in nanoscaled Si and Ge device technologies and emerging 2D materials, as well as device technology for wide bandgap semiconductors for high power/high temperature applications. In 2005, he co-founded the company TranSiC. He was awarded the first ERC grant for advanced investigators, has supervised 32 PhD theses, and has co-authored about 500 publications. He is an editor of IEEE Electron Device Letters and is an IEEE Fellow.
James Hannon
Guest Editor for this issue of MRS Bulletin
IBM T.J. Watson Research Center, USA; tel. 914-945-2274; and email [email protected].
Hannon manages the Carbon Electronics Group at the IBM T.J. Watson Research Center. He received his PhD degree in physics from the University of Pennsylvania in 1994, working in the area of surface structure and dynamics. Following postdoctoral appointments at the Forschungszentrum Jülich and Sandia National Laboratories, he joined the physics faculty of Carnegie Mellon University. In 2000, he moved to the IBM Research Division, continuing his research on growth, stress, and thermodynamics at semiconductor surfaces. His research focuses on integrating carbon nanotube-based logic devices with conventional CMOS. He is the author of over 150 publications, patents, and conference presentations.
Behtash Behin-Aein
GlobalFoundries, USA; tel. 408-462-4014; and email [email protected].
Behin-Aein works in the Technology Research Group at GlobalFoundries. He earned his PhD degree in electrical and computer engineering from Purdue University (2010) with specialization in spintronics for logic applications. His interests include non-Si-based FinFETs, STT-MRAM, and spin-based logic. He has authored more than 20 publications and patents. He is lead principal investigator on atomistic modeling of SiGe transistors with FinFET geometry for the US Department of Energy’s Leadership Computing challenge and is the recipient of the 2012 Proctor Prize Grant-in-Aid of Research.
Ageeth Bol
Eindhoven University of Technology, The Netherlands; email [email protected].
Bol is an associate professor of applied physics at Eindhoven University of Technology. She received her MS and PhD degrees in chemistry from Utrecht University. After obtaining her PhD degree in 2001, she worked for Philips Electronics and the IBM T.J. Watson Research Center. In 2011, she joined the faculty of Eindhoven University of Technology. Her research interests include the fabrication, modification, and integration of 1D and 2D nanomaterials for nanodevice applications.
Zhihong Chen
Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, USA; tel. 765-494-0772; and email [email protected].
Chen has been an associate professor of electrical and computer engineering at Purdue University since October 2010. From 2004 to 2010, she was with the IBM T.J. Watson Research Center working on design and fabrication of high-performance carbon-based electronics. She was the manager of the Carbon Technology Group from 2008 to 2010. Her current research at Purdue focuses on synthesis of two-dimensional thin films, understanding physical properties of nanomaterials, fabricating nanostructures with desired properties, and functionalities for electronic, spintronic, and optoelectronic applications. She serves as editor of IEEE Electron Device Letters. She received the Intel Early Career Faculty Award in 2012 and the Joel and Ruth Spira Excellence in Teaching Award in 2013.
Jesús A. del Alamo
Massachusetts Institute of Technology, USA; tel. 617-253-4764; and email [email protected].
del Alamo is Donner Professor and director of the Microsystems Technology Laboratories at the Massachusetts Institute of Technology. He holds degrees from the Polytechnic University of Madrid and Stanford University. His current interests are nanoelectronics based on compound semiconductors. He is a member of the Royal Spanish Academy of Engineering, an IEEE Fellow, and serves as editor of IEEE Electron Device Letters. In 2012, he received the Intel Outstanding Researcher Award, the SRC Technical Excellence Award, and the IEEE EDS Education Award.
Xiao Gong
Electrical and Computer Engineering, National University of Singapore, Singapore; tel. +65-6516 1589; and email [email protected].
Gong is a research fellow with the National University of Singapore (NUS). He received his B.Eng. degree from the Beijing Institute of Technology and his PhD degree from NUS in 2013. His research interests include using high mobility channel materials for mobility enhancement of CMOS for sub-10 nm technology node and monolithic integration of III–V HEMTs with Si CMOS. He has published more than 60 papers. He was a Bronze Medal winner of the 6th TSMC Outstanding Student Researcher Award in 2012.
Suyog Gupta
IBM T.J. Watson Research Center, USA; tel. 914-945-2009; and email [email protected].
Gupta is a research scientist at the IBM T.J. Watson Research Center. He received his bachelor’s and master’s degrees in technology from IIT Bombay in 2009 and his PhD degree in electrical engineering from Stanford University in 2013. As a part of his doctoral research, he worked on applying Sn-based group IV semiconductors to CMOS and Si-compatible photonic devices. He is a recipient of the IIT Bombay Institute Gold Medal, Stanford Graduate Fellowship, and Numerical Technologies Founders’ Scholarship.
Gage Hills
Stanford University, USA; email [email protected].
Hills is a PhD candidate at Stanford University. He received his BS degree in electrical engineering and computer science from Yale University in 2007 and his MS degree in electrical engineering from Stanford University in 2012. His current research interests include experimental demonstration and modeling of very large-scale carbon nanotube-based digital circuits, with a focus on variability aware design and optimization.
Minghwei Hong
Department of Physics and Graduate Institute of Applied Physics, National Taiwan University, Taiwan; tel. 886-2-3366-5193; and email [email protected].
Hong is a distinguished professor in the Graduate Institute of Applied Physics at National Taiwan University, where he received a BS degree in physics in 1973. He received his MS degree (1978) and PhD degree in materials science (1980) from the University of California, Berkeley. He is a Fellow of APS, IEEE, and the Physical Society of the Republic of China. His current research interest includes nanoelectronics emphasizing oxide/semiconductor interfaces and devices.
Lionel C. Kimerling
MIT Microphotonics Center, Massachusetts Institute of Technology, USA; tel. 617-253-5383; and email [email protected].
Kimerling is a Thomas Lord Professor of Materials Science and Engineering at the Massachusetts Institute of Technology (MIT) and the founding director of the MIT Microphotonics Center, where he conducts a research program in the structure, properties, and processing of semiconductor materials and leads the Communication Technology Roadmap. He received his SB degree in metallurgy and his PhD degree in materials science from MIT. He has authored more than 300 articles and holds more than 50 patents. He is a Fellow of the APS, AAAS, TMS, MRS, and the School of Engineering at the University of Tokyo.
Dim-Lee Kwong
Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore; email [email protected].
Kwong is the executive director of the Institute of Microelectronics at A*STAR and a professor of electrical and computer engineering at the National University of Singapore (NUS). He received the IBM Faculty Award (1984–1986), Semiconductor Research Corporation Inventor Awards (1993–1994), General Motor Foundation Fellowship (1992–1995), Halliburton Foundation Excellent Teaching Award (1994), Engineering Foundation Award (1995), IEEE George Smith Award (2007), and the IEEE Frederik Philips Award (2011). He is an IEEE Fellow, has more than 1,100 publications, and holds more than 25 US patents.
Max Lemme
University of Siegen, Germany; tel. +49-271-740-4035; and email [email protected].
Lemme is the Heisenberg Professor for Graphene-Based Nanotechnology at the University of Siegen and affiliated professor at KTH Royal Institute of Technology, Sweden. He received a Dr.-Ing. (PhD) degree from RWTH Aachen University in 2003. He was a research fellow at Harvard University from 2008–2010 and was AMO GmbH’s head of the Technology Department for 10 years. He received a NanoFuture Award (2006), a Humboldt Fellowship (2007), and an ERC grant (2012). He has authored over 200 papers.
Lain-Jong (Lance) Li
Institute of Atomic and Molecular Sciences, Academia Sinica, Taiwan; tel. +886-2-23668205; and email [email protected].
Li is a research fellow in the Institute of Atomic and Molecular Sciences, Academia Sinica. He received his PhD degree in condensed-matter physics at Oxford University in 2006. His current research interests focus on the growth and characterization of 2D materials, including graphene and transition-metal dichalcogenides. He received a Humboldt Research Fellowship for Experienced Researchers and a Career Development Award. He has authored more than 160 publications, given 30 talks, and holds more than 40 patents.
Subhasish Mitra
Stanford University, USA; email [email protected].
Mitra directs the Robust Systems Group in the Departments of Electrical Engineering and Computer Science at Stanford University, where he is the Chambers Faculty Scholar of Engineering. Previously, he was a principal engineer at Intel. His honors include the ACM SIGDA/IEEE CEDA A. Richard Newton Technical Impact Award in Electronic Design Automation; the Presidential Early Career Award for Scientists and Engineers (PECASE) from the White House; and the Intel Achievement Award. He is a Fellow of IEEE.
Tomás Palacios
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, USA; tel. 617-324-2395; and email [email protected].
Palacios is an associate professor in the Department of Electrical Engineering and Computer Science at the Massachusetts Institute of Technology. He received his PhD degree from the University of California, Santa Barbara, in 2006. His current research focuses on the combination of new semiconductor materials and device concepts. His awards include the PECASE and the IEEE George Smith Award. He has authored more than 200 publications, three book chapters, and more than 10 patents.
Lian-Mao Peng
Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, China; email [email protected].
Peng is the head of the Department of Electronics and the director of the Key Laboratory for the Physics and Chemistry of Nanodevices at Peking University, where he received his BS degree (1982). He obtained his PhD degree in physics from Arizona State University (1988). His research focuses on carbon-based high-performance electronic and optoelectronic devices. He has published over 300 papers and one book. He is an associate editor of the Journal of Applied Physics and chairman of the International Union of Crystallography’s Electron Crystallography Commission.
Eric Pop
Stanford University, USA; tel: 650-725-8768; and email [email protected].
Pop is an associate professor of Electrical Engineering at Stanford University. He received his BS and M.Eng. degrees in electrical engineering and a BS degree in physics from the Massachusetts Institute of Technology (1999). He received his PhD degree in electrical engineering from Stanford University (2005). His research interests include energy efficient electronics, novel 2D and 1D devices and materials, and nanoscale energy conversion and harvesting. His honors include the 2010 PECASE and an NSF CAREER Award. He is a senior member of IEEE and a member of APS, MRS, and AAAS. He was the program chair of the 2014 Device Research Conference.
Simone Raoux
Institute Nanospectroscopy for Energy Material Design and Optimization, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Germany; tel. +49 30 8062 12936; and email [email protected].
Raoux is head of the Institute Nanospectroscopy for Energy Material Design and Optimization at the Helmholtz Center Berlin for Materials and Energy. She received her MS and PhD degrees in physics from Humboldt University. She currently works on the design and optimization of nanostructured and hybrid materials for renewable energy technologies with a focus on synchrotron-based materials characterization techniques. She is a Fellow of APS, senior member of IEEE, and member of MRS and DPG.
Heike Riel
Materials Integration and Nanoscale Devices, IBM Research–Zurich, Switzerland; tel. +41 44 724 8334; and email [email protected].
Riel is an IBM Fellow (2013) and has led the Materials Integration and Nanoscale Devices Group at IBM Research–Zurich since 2008. She received MSc (1998) and PhD (2002) degrees in physics. Her interests include new materials and novel device concepts for future nanoelectronics. She was elected to MIT TR100 in 2003, received the 2005 Applied Physics Award of the Swiss Physical Society, and the “Technical or Scientific Innovation” Award by the Swiss Association of Women in Engineering (SVIN).
Krishna Saraswat
Department of Electrical Engineering, Stanford University, USA; tel. 650-725-3610; and email [email protected].
Saraswat is the Rickey/Nielsen Chair Professor in Electrical Engineering at Stanford University, where he received his PhD degree in electrical engineering. His research includes materials, structures, and process technology of semiconductor devices and interconnects for nanoelectronics and solar cells. He has assisted over 80 doctoral students and has published over 725 papers. He is a Life Fellow of IEEE, and his awards include the IEEE Andrew Grove Award (2004) and the Electrochemical Society Thomas Callinan Award (2000).
Frank Schwierz
Technical University, Germany; tel. +49 (0)3677- 693120; and email [email protected].
Schwierz is Privatdozent and head of the RF & Nano Devices Research at Technische Universität (TU) Ilmenau, where he received his Dr. (1986) and Dr. habil. (2002) degrees. His research interests include semiconductor device modeling and simulation, ultrahigh-speed transistors, and novel device and material concepts for future transistor generations. He has authored 220 publications, two books, and two book chapters.
Shinichi Takagi
Department of Electrical Engineering and Information Systems, University of Tokyo, Japan; tel. +81-3-5841-0419; and email [email protected].
Takagi is a professor with the Department of Electrical Engineering and Information Systems, School of Engineering, University of Tokyo. He received his BS (1982), MS (1984), and PhD (1987) degrees in electronic engineering from the University of Tokyo. His interests include the science and technologies of advanced MOS-based devices. He has co-authored 680 papers. He has received 13 awards, including the IEEE EDS George E. Smith Award (2004) and the IEEE Andrew Grove Award (2013).
Nick Thissen
Department of Applied Physics, Eindhoven University of Technology, The Netherlands; tel. 040-247 8381; and email [email protected].
Thissen is a PhD student in the Department of Applied Physics at Eindhoven University of Technology, where he received his master’s degree in applied physics in 2012 working on the fabrication of carbon nanotube transistors by means of direct-write atomic layer deposition. His research interests include the field of integration of carbon nanotubes and graphene nanodevices.
Kazumi Wada
Department of Materials Engineering; University of Tokyo, Japan; tel. 03-5841-7141; and email [email protected].
Wada has been a professor of microphotonics in the Department of Materials Engineering at the University of Tokyo since 2004. He received his PhD degree in instrumentation engineering from Keio University. He has published more than 150 papers and has edited 13 books. He has served on the MRS Board of Directors and JSAP’s Editorial Board and currently serves on the Applied Physics Reviews Editorial Board. He is a JSAP Fellow (2009) and recently received JSAP’s Izuo Hayashi Award.
Jian-Ping Wang
University of Minnesota, USA; email [email protected].
Wang is the Distinguished McKnight University Professor of Electrical and Computer Engineering; member of the graduate faculty in Physics, Chemical Engineering and Materials Science, and Biomedical Engineering; and director of the Center for Spintronic Materials, Interfaces and Novel Architectures (C-SPIN) at the University of Minnesota. He received his PhD degree in 1995 from the Institute of Physics, Chinese Academy of Sciences. He performs research on exchange coupled composite perpendicular media, perpendicular spintronic devices and magnetic tunnel junction-based memory, logic, and computation devices. His current research programs focus on searching, fabricating, and fundamentally understanding novel nanoscale magnetic and spintronic materials and devices. He received the Information Storage Industry Consortium (INSIC) Technical Award in 2006 and the Outstanding Professor Award in 2010. He has more than 210 publications and holds 30 patents.
Lars-Erik Wernersson
Lund University, Sweden; tel. +46462229003; and email [email protected].
Wernersson has been a professor of nanoelectronics at Lund University since 2005. He obtained a PhD degree in solid-state physics from Lund University in 1998. His main research topics include nanowire- and tunneling-based nanoelectronic devices and circuits for low-power electronics and wireless communication. He has published more than 150 papers. He has been awarded two Swedish career grants and serves as Editor for IEEE Transactions on Nanotechnology.
Roland Wiesendanger
Department of Physics, University of Hamburg, Germany; tel. +49 (0)40 42838- 5244; and email [email protected].
Wiesendanger has been a full professor in the Department of Physics at the University of Hamburg since 1993. He received his PhD (1987) and Habilitation (1990) degrees from the University of Basel. He has over 500 publications and has presented more than 450 invited talks. His awards include the Gaede-Prize (1992), the Max Auwärter Prize (1992), the Karl Heinz Beckurts Prize (1999), the Philip Morris Research Prize (2003), two Advanced Grant Awards of the European Research Council (2008 and 2013), the Nanotechnology Recognition Award of the AVS (2010), and the Heinrich Rohrer Grand Medal (2014).
H.-S. Philip Wong
Stanford University, USA; tel. 650-725-0982; and email [email protected].
Wong is the Willard R. and Inez Kerr Bell Professor in the School of Engineering at Stanford University. He received his BSc (Hons.) degree from the University of Hong Kong, MS degree from Stony Brook University, and PhD degree from Lehigh University. He joined the IBM T.J. Watson Research Center in 1988 and then moved to Stanford University as a professor of electrical engineering in 2004. He is a Fellow of the IEEE and was the general chair of the 2007 International Electron Devices Meeting.
Matthias Wuttig
Physikalisches Institut and Jülich Aachen Research Alliance – Fundamentals of Future Information Technology, RWTH Aachen University, Germany; tel. +49-241-80-27155; and email [email protected].
Wuttig has been a full professor of physics since 1997 at RWTH Aachen, where his research focus is the understanding and tailoring of materials with unique optical and electrical properties. He received a diploma in physics from the University of Cologne and a PhD degree from Forschungszentrum Jülich. He is speaker of the Strategy Board of RWTH Aachen and has served as dean of the faculty of science, mathematics, and computer sciences. His awards include an ERC Advanced Grant in 2013.
Feng Xiong
Stanford University, USA; tel. 217-819-8465; and email [email protected].
Xiong is a postdoctoral fellow at Stanford University, where his research focuses on energy efficient nanoscale electronics. He received his B.Eng. degree in electrical engineering from the National University of Singapore (2008) and his MS (2010) and PhD (2014) degrees in electrical engineering from the University of Illinois at Urbana–Champaign. His doctoral thesis was on the scaling study of phase change memory using carbon nanotube electrodes. His awards include the Nano- and Quantum Science and Engineering Postdoctoral Fellowship from Stanford University. He is a member of IEEE and MRS.
Yee-Chia Yeo
Electrical and Computer Engineering, National University of Singapore; tel. 65-6516 2298; and email [email protected].
Yeo is a professor of electrical and computer engineering at the National University of Singapore (NUS). He received B.Eng. and M.Eng. degrees from NUS and MS and PhD degrees from the University of California, Berkeley. He has co-authored 550 papers, holds 101 US patents, and received the 2002 and 2008 IEEE Paul Rappaport Awards.
Rui Zhang
Department of Information Science and Electronic Engineering, Zhejiang University, China; tel. +86-571-87951705 (Ex: 206); and email [email protected].
Zhang is an assistant professor at Zhejiang University. He received his BE (2006) and ME (2009) degrees in materials science and engineering from Tsinghua University and his PhD degree in electrical engineering from the University of Tokyo in 2012. His research interests include MOS devices based on Ge and other high mobility materials for CMOS applications.
