The Institute of Physics (IoP) biannual conference series “Microscopy of Semiconducting Materials” (MSM-XIX) will be held March 29–April 2, 2015, at Murray Edwards College, University of Cambridge, UK. The conference has a long tradition of focusing on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important micro-characterization techniques, including scanning probe microscopy and x-ray topography and diffraction, will also be featured. Developments in materials science and technology covering the complete range of elemental and compound semiconductors and nanostructures thereof will be described.
The conference is organized by the Electron Microscopy and Analysis Group, which includes members from physics, materials science, chemistry, and engineering disciplines.
Some of the symposium topics include analytical electron microscopy, cathodoluminescence, lattice defects in bulk materials, thin films, and scanning electron and ion-beam techniques.
Contributions for oral or poster presentations should be submitted online by December 29, 2014. There is an early registration deadline of February 25, 2015. The proceedings of the conference will be published in special issues of scientific journals. More information can be accessed at the meeting website at http://msm2015.iopconfs.org.
