An innovative tri-axes micro-power receiver is proposed and studied for wireless magnetic energy transmission. The tri-axes micro-power receiver mainly consists of two sets of 3D micro-solenoids and one set of planar micro-coils in which individually iron core is all embedded. The three sets of micro-coils/micro-solenoids are designed to be orthogonal to each other. Therefore, no matter which direction the input magnetic flux is present along, the supplied magnetic energy can be harvested and transformed into electric power by the proposed micro-power receiver in wireless sense. Not only dead zone of receiving power is greatly reduced, but also transformation efficiency of magnetic energy into electric power can be much enhanced. By Biot-Savart law and Faraday’s law, the mathematical description upon power transmission from transmitter to receiver is developed. By employing commercial software, Ansoft Maxwell, based on finite element method, the estimation error on power transmission by mathematical description is revealed. Besides, the preliminary simulation results by Ansoft Maxwell show that the proposed micro-power receiver can efficiently harvest the energy supplied by magnetic power source. The design parameters of tri-axes micro-receiver are hence examined and verified for follow-up fabrication. At last, for the MEMS process, the isotropic etching technique is employed to micro-machine the inverse-trapezoid fillister so that the copper wire can be successfully electroplated. The adhesion between micro-coils and fillister is hence much enhanced as well.

We prepared the sputtered Co/p-InP Schottky diodes which consisted of as-deposited, and diodes annealed from 200 °C to 700 °C. The annealed samples were cooled from the annealing temperature down to room temperature, and then, their current-voltage (I-V) characteristics were measured. Schottky barrier height (SBH) at 300 K slightly decreases from 0.80 eV (for as-deposited sample) down to 0.77 eV (for the sample annealed at 400 °C) with the annealing temperature and then again increases up to 0.91 eV for the sample annealed at 700 °C. The I-V measurements were made in the sample temperature range of 60–400 K. It is seen that the SBH for each diode monotonically increases with increasing the sample temperature up to 400 K. In the sample temperature range of 60–400 K, the Co/p-InP SBD annealed at 400 °C has a lower ideality factor value than those of the as-deposited and 200 °C annealed SBDs at each sample temperature. Thus, remarkable apparent improvement of the diode parameters has been achieved by means of the thermal annealing. The improvement in the Co/p-InP interface due to the thermal annealing process has continued without deteriorating at each measurement temperature from 60 K to 400 K. Therefore, it has been concluded that the thermal annealing process translates the MS Schottky contacts into thermally more stable Schottky contacts.

In this paper, an nLDMOS and a pLDMOS are developed by slight modifications of the base process steps of 0.35 μm BiCMOS technology. Extra two masks are used for the formation of the body region and the drift region with slightly added thermal budget and without resorting to high-tilt implants. The specific ON-resistance (RON,SP) and the OFF-state breakdown voltage (BV) are 1.5 mΩ cm2 and 60 V, for the nLDMOS and 3.0 mΩ cm2 and 160 V, for the pLDMOS, so the devices can typically be operated around 42 V supply voltage, which is suitable for the new automotive applications. An isolation mechanism between the power devices is suggested using a deep trench filled with silicon dioxide and undoped polysilicon. The polysilicon has a nearly perfect conformal deposition, that is, both step coverage and bottom coverage are 100%. A simple subcircuit model is built using a two module approach, one for the intrinsic MOS area and the other for the drift region. The Spice model parameters of the intrinsic MOS part are extracted using a system that links the ICCAP extraction tool with the results of the ISE-TCAD tools. The simulation results using the Spice model are compared to the results provided by ISE-TCAD tools, and the accuracy at room temperature is less than 5% for the whole voltage domain. An interface circuit, to convert 0/3.3 V to 0/42 V, suitable for automotive applications, is proposed.

We have performed an ab initio study of electronic and dynamical properties of the zinc-blende InSb at different electronic temperatures. The calculations have been carried out within the density-functional theory and linear-response formalism using norm-conserving pseudopotentials and a plane-wave basis. The calculated direct band gap is seen to be 0.1 eV, which is underestimated with the experimental value of 0.18 eV. As the electronic temperature increases, the results indicate that the InSb undergoes a melting transition to a metallic state. The transverse acoustic modes of the InSb are found to be negative in the most part of the Brillouin zone (BZ) which leads to lattice dynamical unstability at electronic temperature of 0.75 eV as indicated by imaginary phonon frequencies. Moreover, for optical modes, there exists a LO-TO splitting at the zone-center (Γ point) when Te = 0 eV and the frequencies are LO = 190.5 cm−1, TO = 182.4 cm−1, respectively; however, the LO-TO splitting will disappear when Te > 0 eV. The calculated values are in reasonable agreement with available experimental and theoretical data.

Crystals of N-acetyl-L-cysteine have been grown by slow evaporation solution growth technique using water as solvent. Cell parameters of the crystals were confirmed by powder X-ray diffraction. Functional groups were identified and their vibrational activity was studied by investigating the FTIR spectrum. Decomposition nature of the grown material was studied in thermal analysis. Transparent nature of the crystal in UV-VIS-NIR region was examined by optical absorption spectrum. Frequency conversion process was tested and the title crystal has two times larger relative second harmonic conversion efficiency compared to the standard KDP. Static and dynamic values of first-order hyperpolarizability were calculated and also the electronic excitation mechanism was analyzed.

Thin Zn0.98Mn0.02O films were grown by pulsed laser deposition on glass substrates under oxygen pressure. The structural properties were studied by X-ray diffraction and Raman techniques, while the conductivity was characterized by the Hall effect. The oxygen pressure during the growth seems to govern the structural and the electrical properties of the thin Zn0.98Mn0.02 films. In fact, the micron size grain and the resistivity of the Zn0.98Mn0.02O increase with the partial oxygen pressure. However, no evident effect was observed on the magnetic behavior. Electronic structure calculations were performed and magnetic moment carried by Mn atom was computed as well.

Existing implementation of perfectly matched layers (PML) constraining the computational volume in an electromagnetic modeling of open structures has been shown to be efficient. However, cases with absorbing materials inserted into PML require substantial amount of memory and calculation time spent on the computation of the field inside the PML layer. In this paper we are addressing these problems by introducing a new computational method. As the procedure requires some substantial amount of memory and operations to compute fields in the PML layer, the paper addresses these issues. The PML split-field equations are revisited yielding a reduction from four-term storage to only three. In addition, the new algorithm is used with a new hybrid MRTD-FDTD (HMRTD) method applied to various lossy structures, conjointly with a higher-order field evaluation. Results demonstrate the efficiency of the new PML algorithm as compared to current schemes.

This paper proposes a semi-analytical model for Pulsed Eddy Current Non-Destructive Evaluation (PEC-NDE) based on the Coupled Electromagnetic Quantities Method (CEQM). The proposed formulation is developed from coupled electric circuit’s approach in which the Crank Nicholson formula is used to derive the transient behavior. The computational model makes use of current excitation allowing the determination of the sensor voltage in the case of an axisymmetric device. The feature of the variation of voltage provides information on the electromagnetic and geometrical properties of the device. So, the second peak of voltage variation (SPVV) and second ratio between the minimum and maximum (RMM2) are used to determine these properties. The proposed model is validated by comparison with Fourier reconstitution obtained from measurements on one hand and with finite element calculations on the other hand. The developed model, associated to an inversion technique, is applied to evaluate the lift-off and the work piece thickness.

The miniaturization of devices and the increase of operating frequencies are two important issues for communication system development. This requires a high degree of integration, higher performance and lower cost. Isolator is an important non-reciprocal passive component for source protection. In most cases, the non-reciprocal effect is based on field displacement phenomenon induced by a magnetized ferrite material. In this paper we propose a new design of a coplanar isolator based on field displacement, composed of a non-symmetrical coplanar transmission line, made from a ferrite layer and ground plane below. Simulations were performed using HFSS software. Measurements were made on a first 1000 μm-thick YIG film sample giving 1 dB of insertion losses and 17 dB isolation and on a second sample made from a 150 μm-thick YIG ferrite sample giving an insertion loss lower than 2 dB. Interesting applications of this isolator structure are considered.

Off-congruent Li-deficient MgO:LiNbO3 crystals were prepared by carrying out post-grown Li-poor vapor transport equilibration (VTE) treatments on a number of 0.47 mm thick MgO (5 mol% in growth melt or 6 mol% in crystal)-doped, initially congruent LiNbO3 plates at 1100 °C over different durations ranged in 40–395 h. At first, the VTE-induced Li composition reduction was measured as a function of the VTE duration using the gravimetric method. Then, optical absorption spectroscopy was applied to study the crystal composition effects on the fundamental optical absorption edge and OH absorption characteristic parameters including the peaking position, band width, peaking absorption and band area. These crystal composition effects enable one to establish the optical methods used for determination of the crystal composition from the spectroscopic measurements. These optical methods overcome the demerit that the gravimetric method is limited to a specific VTE temperature or crystal thickness, and can be applied to design and produce an MgO-doped crystal with desired Li composition.

In this study, we reported a plasma method to generate the cold pulsed glow discharge for large-area surface modifications of various polymers, such as polyethylene (PE), polyethylene terephthalate (PET), polypropylene (PP), and polytetrafluoroethylene (PTFE). The cold plasmas consisting of pulsed and glow-like breakdowns with peak widths of several microseconds may efficiently prevent the heat-sensitive materials from being damaged and greatly improve the surface properties of treated polymers. Analysis indicates that discharge parameters, such as the discharge pressure and gas compositions, may significantly influence the density of radicals or ions generated near the polymer surface, and their energy, which in turn determine the surface properties of treated polymers, such as surface chemical compositions and hydrophobicity. The reaction processes of activated species, such as radicals and energetic ions at the surfaces of treated polymers, are discussed based on the obtained experimental results. Compared to many other plasma techniques formed at high pressure or with a long discharge distance, the low-pressure plasmas generated through small gas spacing from this design may result in the efficient and frequent collisions between the polymer surface and activated species, thus demonstrating an efficient usage of electric energy and feed gas.

The design and construction of an instrumentation for NOX degradation in a dielectric-barrier discharge reactor (DBDR) is presented. This is endowed with a parallel plane electrode glass-glass (GG) circular geometry configuration. A solid-state multi-cellular power supply was produced in order to generate the plasma discharge. The power supply is based on a full-bridge voltage inverter commanded by three 4.33 kHz square-wave signals. Thus, the output converter signal is filtered by a resonant LC circuit, providing a 13 kHz sine wave to the DBDR. Initial results showing high removal efficiencies of about 97% have been obtained by means of this instrumentation.

This paper presents two radar simulation platforms that have been developed and evaluated. One is based on the Advanced Design System (ADS) and the other on Matlab. Both platforms are modeled using homodyne front-end 77 GHz radar, based on commercially available monolithic microwave integrated circuits (MMIC). Known linear modulation formats such as the frequency modulation continuous wave (FMCW) and three-segment FMCW have been studied, and a new variant, the dual FMCW, is proposed for easier association between beat frequencies, while maintaining an excellent distance estimation of the targets. In the signal processing domain, new algorithms are proposed for the three-segment FMCW and for the dual FMCW. While both of these algorithms present the choice of either using complex or real data, the former allows faster signal processing, whereas the latter enables a simplified front-end architecture. The estimation performance of the modulation formats has been evaluated using the Cramer-Rao and Barankin bounds. It is found that the dual FMCW modulation format is slightly better than the other two formats tested in this work. A threshold effect is found at a signal-to-noise ratio (SNR) of 12 dB which means that, to be able to detect a target, the SNR should be above this value. In real hardware, the SNR detection limit should be set to about at least 15 dB.

The objective of this work is to approach the possibilities of stimulated infrared thermography in dimensional characterization of defects situated in mural paintings. Towards this end, we have proceeded in two stages. Initially, we have developed, with the help of a point source photothermal analysis, an in situ measurement of the longitudinal thermal diffusivity parameter. Then, we have proceeded to the characterization of the depth of the studied defect, by means of a wide photothermal analysis and of a confrontation between theory and experiment. In this article, we present these two measurement techniques and show that the approach allows a good estimation of the depth of an inclusion of plastazote in a copy of the “Saint Christophe” of the “Campana” collection of the “Louvre Museum”.

Based on the dielectric-continuum model and Loudon’s crystal model, the propagating optical phonons and electron-phonon interactions are studied by using the determinate method. The dispersions and electron-phonon coupling functions of the propagating optical phonons are investigated for wurtzite GaN/ZnO single quantum well (QW). The numerical results show that there are infinite propagating phonon branches by a quantum number m in the two regions. The propagating optical phonons are more dispersive for decreasing m. Moreover, the electron-phonon coupling functions have oscillating behavior in barrier layer (GaN), the periods of electron-phonon coupling functions in low frequency region are larger than those in high frequency region. The electron-phonon coupling functions of propagating phonon modes in low frequency region are more important than those in high frequency region.

CaCu3Ti4O12 (CCTO) powder was synthesized by the combustion method. The effect of sintering temperature was studied on dielectric properties of the prepared ceramic samples. They have the dielectric constant of ~31 000 and 80 000 for the grain size of 0.3 and 30–100 μm. It is unusual for CCTO with a grain size of 0.3 μm to have a dielectric constant of ~31 000. Their giant dielectric constant could be explained by a two-step internal-barrier-layer-capacitor model, associated with grain boundaries and domain boundaries. The existence of domain boundaries helped to explain the contradiction of the dielectric mechanisms between polycrystalline and single-crystal CCTO.