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Ultrasonically stimulated temperature rise around dislocation: extended defect mapping and imaging

Published online by Cambridge University Press:  15 July 2004

R. K. Savkina ,
A. B. Smirnov ,
V. V. Tetyorkin  and
N. M. Krolevec
R. K. Savkina*
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, prospect Nauki 45 Kiev, 03028, Ukraine
A. B. Smirnov
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, prospect Nauki 45 Kiev, 03028, Ukraine
V. V. Tetyorkin
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, prospect Nauki 45 Kiev, 03028, Ukraine
N. M. Krolevec
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, prospect Nauki 45 Kiev, 03028, Ukraine
*
[email protected]
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Abstract

The nonuniform temperature distribution in a crystal surface during ultrasonic loading has been detected. This effect was associated with a sonic-stimulated temperature rise around dislocations and heating of the nonperfect regions of the samples investigated. The dislocation moved in an ultrasonic field was considered as a linear thermal source. We calculated the temperature distribution around dislocations and determined conditions of the discrete and continuous distribution of thermal sources for Hg$_{1-x}$CdxTe alloys. We also discuss the possibility of using the investigated effect as the basis of a non-destructive technique for extended defect mapping and imaging in crystals.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 375 - 377
Copyright
© EDP Sciences, 2004

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References

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