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Ultrafast transport transient in photoexcited ZnSe
Published online by Cambridge University Press: 09 April 2008
Abstract
A theoretical study (by using the Nonequilibrium Statistical Operator Method) is performed on the ultrafast transient transport properties of photoexcited carriers in ZnSe subjected to electric fields up to 35 kV/cm. The electron and hole drift velocity evolution towards the steady state present maxima in subpicosecond scale.
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- © EDP Sciences, 2008
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