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A study of growth mechanism of microcrystalline thin silicon films deposited at low temperature by SiF4-H2-He PECVD

Published online by Cambridge University Press:  03 May 2004

M. Losurdo ,
M. Giangregorio ,
A. Grimaldi ,
P. Capezzuto  and
G. Bruno
M. Losurdo*
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM Unit, Department of Chemistry, University of Bari, via Orabona 4, 70126 Bari, Italy
M. Giangregorio
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM Unit, Department of Chemistry, University of Bari, via Orabona 4, 70126 Bari, Italy
A. Grimaldi
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM Unit, Department of Chemistry, University of Bari, via Orabona 4, 70126 Bari, Italy
P. Capezzuto
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM Unit, Department of Chemistry, University of Bari, via Orabona 4, 70126 Bari, Italy
G. Bruno
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM Unit, Department of Chemistry, University of Bari, via Orabona 4, 70126 Bari, Italy
*
[email protected]
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Abstract

Fully microcrystalline silicon, μc-Si, thin films (<100 nm) have been deposited at low temperature (60 °C) on Corning glass and plastic flexible polyimide substrates by plasma enhanced chemical vapor deposition (PECVD) using SiF4-H2-He. The effect of deposition temperature on the structure, i.e., crystallinity and density, of μc-Si films is investigated by spectroscopic ellipsometry in the 1.5−5.5 eV energy range. Modeling of spectroscopic ellipsometry data is used for highlighting crystallinity of the substrate/film interface, i.e., the absence of any amorphous incubation layer. It is found that film crystallinity does not depend on film thickness, and it increases with the decrease of deposition temperature. The temperature dependence is explained on the basis of a like-Arrhenius kinetic analysis of the etching process by atomic fluorine and hydrogen of both μc-Si and a-Si phases.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 26 , Issue 3: 14th International Colloquium on Plasma Processes (CIP 2003) , June 2004 , pp. 187 - 192
Copyright
© EDP Sciences, 2004

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