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Studies on Al–Mg solid solutions using electrical resistivityand microhardness measurements

Published online by Cambridge University Press:  15 August 1999

A. Gaber ,
N. Afify ,
S. M. El-Halawany  and
A. Mossad
A. Gaber*
Affiliation:
Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt
N. Afify
Affiliation:
Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt
S. M. El-Halawany
Affiliation:
Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt
A. Mossad
Affiliation:
Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt
*
[email protected]
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Abstract

Al-C at% Mg alloys (C = 0.82, 1.84, 3.76, 5.74 and 12.18) have been selected forthis study. From the electrical resistivity measurements it is concluded that theresistivity increment of Al–Mg alloys (in a solid solution state) is proportional tothe atomic fractional constituents (Mg and Al) as $\Delta\rho_{\rmall}=64.66\ c(1-c)~\mu\Omegarm$  cm. In addition, both the temperature coefficient ofresistivity, α all and the relaxation time of the free electronsτ all in the alloys diminish with increasing the solute Mg concentration.The increase of the scattering power, η, with increasing C is interpreted to bedue to the contribution of electron-impurity scattering. The percentage increase dueto electron-impurity scattering per one atomic percent Mg has been determined as12.99%. The Debye temperature θ decreases as the Mg concentration increases.The microhardness results showed that the solid solution hardening obeys the relationΔHV s = 135.5C 0.778 MPa which is comparable to the theory of solid solution hardening for all alloys; ΔHV s ≈ C 0.5−0.67 MPa.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 7 , Issue 2 , August 1999 , pp. 103 - 109
Copyright
© EDP Sciences, 1999

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