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Strain effects of InP/Si and InP/porous Si studiedby spectroscopic ellipsometry

Published online by Cambridge University Press:  28 March 2008

M. Lajnef ,
N. Ben Sedrine ,
J. C. Harmand ,
L. Travers ,
H. Ezzaouia  and
R. Chtourou
M. Lajnef*
Affiliation:
Laboratoire de Photovoltaïque et de Semiconducteurs, Centre de Recherche des Sciences et Technologies de l'Énergie, BP 95, Hammam-Lif 2050, Tunisia
N. Ben Sedrine
Affiliation:
Laboratoire de Photovoltaïque et de Semiconducteurs, Centre de Recherche des Sciences et Technologies de l'Énergie, BP 95, Hammam-Lif 2050, Tunisia
J. C. Harmand
Affiliation:
Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France
L. Travers
Affiliation:
Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France
H. Ezzaouia
Affiliation:
Laboratoire de Photovoltaïque et de Semiconducteurs, Centre de Recherche des Sciences et Technologies de l'Énergie, BP 95, Hammam-Lif 2050, Tunisia
R. Chtourou
Affiliation:
Laboratoire de Photovoltaïque et de Semiconducteurs, Centre de Recherche des Sciences et Technologies de l'Énergie, BP 95, Hammam-Lif 2050, Tunisia
*
[email protected]
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Abstract

In this work, we study the optical interband transitions of InP on silicon (InP/Si) and on porous silicon (InP/PSi) substrates grown by molecular beam epitaxy (MBE). Spectroscopic ellipsometry for photon energies from 2 to 5 eV is used to determine the InP/Si and InP/PSi complex refractive index and thickness. Bruggeman effective medium approximation (EMA) associated to the Cauchy model are used to model the experimental ellipsometric data. We have found that the E 1 and E 1 + $\Delta _{1}$ transition energies of InP/Si and InP/PSi shift to low energies compared to bulk InP. This effect is interpreted as a result of the strain relaxation of the InP layers grown respectively on Si and porous Si substrates.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 42 , Issue 2 , May 2008 , pp. 99 - 102
Copyright
© EDP Sciences, 2008

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