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Room-temperature diffusion of evaporated Fe atom into SOI materials characterized by scanning Kelvin-SPV method

Published online by Cambridge University Press:  15 July 2004

S. Nakamura ,
H. Ikeda ,
D. Watanabe ,
M. Suhara  and
T. Okumura
S. Nakamura*
Affiliation:
Department of Electrical Engineering, Tokyo Metropolitan University, 1-1 Minami-ohsawa, Hachioji, Tokyo 192-0397, Japan
H. Ikeda
Affiliation:
Department of Electrical Engineering, Tokyo Metropolitan University, 1-1 Minami-ohsawa, Hachioji, Tokyo 192-0397, Japan
D. Watanabe
Affiliation:
Department of Electrical Engineering, Tokyo Metropolitan University, 1-1 Minami-ohsawa, Hachioji, Tokyo 192-0397, Japan
M. Suhara
Affiliation:
Department of Electrical Engineering, Tokyo Metropolitan University, 1-1 Minami-ohsawa, Hachioji, Tokyo 192-0397, Japan
T. Okumura
Affiliation:
Department of Electrical Engineering, Tokyo Metropolitan University, 1-1 Minami-ohsawa, Hachioji, Tokyo 192-0397, Japan
*
[email protected]
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Abstract

The room-temperature diffusion of evaporated Fe atoms into Si and silicon-on-insulator (SOI) materials has been studied by means of the Kelvin-surface photovoltage (SPV) method. The contactless and imaging feature of this technique enabled us to visualize the evidence of the Fe diffusion by using a single sample partly deposited with Fe. The image contrast in the regions between deposited and non-deposited with Fe was clearly observed in the SPV measurements, even after the thin Fe evaporated layer was completely removed off from the SOI surface. In addition, this contrast can be observed down to about 80 nm from the top surface. This result indicates that the Fe atoms can be soluble in the Si layer at room temperature, when Fe atoms are introduced by the vacuum evaporation. Furthermore, the time variation of the depth profile of Fe contamination was also discussed. Our results suggest that the evaporated Fe atoms diffused into the Si layer and dissolved in some form as a recombination center at room temperature.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 487 - 489
Copyright
© EDP Sciences, 2004

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References

Okumura, T., Eguchi, K., En, A., Suhara, M., Jpn J. Appl. Phys. 40, 5217 (2001) CrossRef
Okumura, T., En, A., Eguchi, K., Suhara, M., Mat. Sci. Eng. B 91–92, 182 (2002) CrossRef
Nakamura, S., En, A., Watanabe, D., Suhara, M., Okumura, T., Appl. Surf. Sci. 216, 113 (2003) CrossRef
Y. Yoshida, S. Ogawa, S. Endou, T. Shimura, M. Umeno, in Proceeding of the 3rd International Symposium on Advanced Science and Technology of Silicon Materials (Kona, Hawaii, USA, 1996), p. 630
Y. Yoshida et al., Hyperfine Interact. 141/142, 157 (2002)
K. Graff: Metal Impurities in Silicon-Device Fabrication (Springer-Verlag Berlin Heidelberg, 1995)
W. Kem, D. A. Puotinen, RCA Rev. 187 (1970)
Watanabe, D., En, A., Nakamura, S., Suhara, M., Okumura, T., Appl. Surf. Sci. 216, 24 (2003) CrossRef