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Production of structurally perfect single crystals of CdTe and CdZnTe

Published online by Cambridge University Press:  15 July 2004

Yu. M. Ivanov ,
V. V. Artemov ,
V. M. Kanevsky ,
A. N. Polyakov ,
V. S. Chudakov ,
E. M. Pashaev  and
R. A. Senin
Yu. M. Ivanov*
Affiliation:
Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow 119333, Russia
V. V. Artemov
Affiliation:
Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow 119333, Russia
V. M. Kanevsky
Affiliation:
Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow 119333, Russia
A. N. Polyakov
Affiliation:
Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow 119333, Russia
V. S. Chudakov
Affiliation:
Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow 119333, Russia
E. M. Pashaev
Affiliation:
Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow 119333, Russia
R. A. Senin
Affiliation:
Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow 119333, Russia
*
[email protected]
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Abstract

Single-crystal ingots of CdTe and Cd0,96Zn0.04Te 60–100 mm in diameter were grown by directional solidification using the self-seeding technique. The microstructure of the crystals was checked by optical microscopy, electron microscopy (TEM, SEM and EBIC), cathodoluminescence, and X-ray diffraction. It was found that crystal perfection depends to a large measure on the temperature schedule during Lpostgrowth crystal cooling: special caution should be exercised in the temperature interval including the polymorphous transformation. A direct relationship between optical and electronic properties on the one hand and crystal microstructure on the other hand was established.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 371 - 374
Copyright
© EDP Sciences, 2004

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