No CrossRef data available.
Published online by Cambridge University Press: 15 September 2000
We present a simple bias reversal technique for single electron
transistors (SET) to remove fluctuations of tunneling resistance from the
read-out signal at low frequencies. The gain of the device is kept
constant
under bias reversal by using asymmetric junction capacitances.
In our Al/AlOx/Al devices with 1.2 μm island size and
100 × 100 nm2 tunnel junctions, the noise at 10 Hz is
$6 \times 10^{-4} e/\sqrt{\mathrm{Hz}}$, independent of the bias modulation.