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Near-field imaging of the photocurrent on a patternedAu/GaAs interface with various wavelengths and bias*
Published online by Cambridge University Press: 15 March 1999
Abstract
This contribution presents an application of scanningnear-field optical microscopy to the characterization of semi-conductors.It is based on the photocurrent mapping of a patterned Au/GaAs structure(Schottky barrier) under local illumination by the nanosource. The resultsobtained with different wavelengths, metallized or dielectric probes anddifferent bias voltages exhibit photocurrent variations independent of the topography and induced by interface defects. Finally, from this study ofa patterned planar structure, we propose a method to determine the meanfree path of the charge carriers in the volume.
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- © EDP Sciences, 1999
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