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Morphology and electrical properties of Pb1−xCdxTe/CdTe heterostructures

Published online by Cambridge University Press:  15 July 2004

E. Saucedo ,
V. Corregidor ,
L. Fornaro ,
N. V. Sochinskii ,
J. Silveira  and
E. Diéguez
E. Saucedo*
Affiliation:
Material Physic Department, Universidad Autónoma de Madrid, Madrid 28049, Spain Compound Semiconductors Group, Faculty of Chemistry, Universidad de la República, Montevideo 11800, Uruguay
V. Corregidor
Affiliation:
Material Physic Department, Universidad Autónoma de Madrid, Madrid 28049, Spain
L. Fornaro
Affiliation:
Compound Semiconductors Group, Faculty of Chemistry, Universidad de la República, Montevideo 11800, Uruguay
N. V. Sochinskii
Affiliation:
Microelectronic Institute of Madrid, CNM-CSIC, c/ Isaac Newton 8 (PTM), Tres Cantos 28760, Madrid, Spain
J. Silveira
Affiliation:
Microelectronic Institute of Madrid, CNM-CSIC, c/ Isaac Newton 8 (PTM), Tres Cantos 28760, Madrid, Spain
E. Diéguez
Affiliation:
Material Physic Department, Universidad Autónoma de Madrid, Madrid 28049, Spain
*
[email protected]
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Abstract

The first experimental results about the growth and characterization of Pb1−xCdxTe new high-Z ternary alloy, grown by Vapour Phase Epitaxy (VPE) onto CdTe single crystal substrates are presented. SEM images have shown a well-defined interface between the substrate and the heterostructure bulk, without voids or inclusions. EDX analysis in a line scan mode was done over the layer crossections. The Te, Pb and Cd concentration profiles were found, verifying a strong inter-diffusion in the metallic sublattices and confirming the existence of the Pb1−xCdxTe ternary alloy. This has been also confirmed by X-ray diffraction measurements. For the longest growth times, two types of surface defects arose: PbTe aligned microcrystals and cylindrical-like Te-rich structures. Hall measurements showed that the carrier concentration of the layers decreases and the resistivity increases when the growth temperature increases. The influence of the surface defects on the electrical properties was also demonstrated.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 207 - 211
Copyright
© EDP Sciences, 2004

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