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Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si1−y Cy (y ≤0.03)

Published online by Cambridge University Press:  15 July 1999

Ph. Dollfus ,
S. Galdin  and
P. Hesto
Ph. Dollfus*
Affiliation:
Institut d'Électronique Fondamentale (URA 22 du CNRS), Université Paris-Sud, Bâtiment 220, 91405 Orsay Cedex, France
S. Galdin
Affiliation:
Institut d'Électronique Fondamentale (URA 22 du CNRS), Université Paris-Sud, Bâtiment 220, 91405 Orsay Cedex, France
P. Hesto
Affiliation:
Institut d'Électronique Fondamentale (URA 22 du CNRS), Université Paris-Sud, Bâtiment 220, 91405 Orsay Cedex, France
*
[email protected]
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Abstract

Electron transport properties in tensile strained Si-based materials are theoretically analyzed using Monte-Carlo calculation. We focus our interest on in-plane transport inSi and Si1−y Cy (y ≤ 0.03), grown respectively on 〈001〉Si1−x Gex pseudo-substrate and Si substrate, with a view toField-Effect-Transistor application. In comparison with unstrained Si, the tensilestrain effect is shown to be very attractive in Si: drift mobilities greater than 3000 cm2/Vs are obtained at 300 K for a Ge fraction mole of 0.2 in thepseudo-substrate. In the Si1−y Cy /Si system, that does not need anypseudo-substrate, the beneficial strain effect on transport is counterbalanced by thealloy scattering whose influence on mobility is studied. If the alloy potential isgreater than about 1 eV, the advantage of strain-induced reduction of effective massis lost in terms of stationary transport performance at 300 K.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 7 , Issue 1 , July 1999 , pp. 73 - 77
Copyright
© EDP Sciences, 1999

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