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Ion-beam sputtering deposition and magnetoelectric properties of layered heterostructures (FM/PZT/FM)n, where FM – Co or Ni78Fe22

Published online by Cambridge University Press:  07 August 2013

Alexander Stognij ,
Nikolai Novitskii ,
Andrei Sazanovich ,
Nadezhda Poddubnaya ,
Sergei Sharko ,
Vladimir Mikhailov ,
Viktor Nizhankovski ,
Vladimir Dyakonov  and
Henryk Szymczak
Alexander Stognij
Affiliation:
Scientific-Practical Materials Research Centre NAS of Belarus, 19 P. Brovki Street, Minsk 220072, Belarus
Nikolai Novitskii
Affiliation:
Scientific-Practical Materials Research Centre NAS of Belarus, 19 P. Brovki Street, Minsk 220072, Belarus
Andrei Sazanovich*
Affiliation:
Institute of Physics, Polish Academy of Science, 02-668 Warsaw, Poland
Nadezhda Poddubnaya
Affiliation:
Scientific-Practical Materials Research Centre NAS of Belarus, 19 P. Brovki Street, Minsk 220072, Belarus
Sergei Sharko
Affiliation:
Scientific-Practical Materials Research Centre NAS of Belarus, 19 P. Brovki Street, Minsk 220072, Belarus
Vladimir Mikhailov
Affiliation:
A.A. Galkin Donetsk Physico-Technical Institute, NNU, 83114 Donetsk, Ukraine
Viktor Nizhankovski
Affiliation:
International Laboratory of High Magnetic Fields and Low Temperatures, 53-421 Wroclaw, Poland
Vladimir Dyakonov
Affiliation:
Institute of Physics, Polish Academy of Science, 02-668 Warsaw, Poland A.A. Galkin Donetsk Physico-Technical Institute, NNU, 83114 Donetsk, Ukraine
Henryk Szymczak
Affiliation:
Institute of Physics, Polish Academy of Science, 02-668 Warsaw, Poland
*
a e-mail: [email protected]
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Abstract

Magnetoelectric properties of layered heterostructures (FM/PZT/FM)n (n≤ 3) obtained by ion-beam sputtering deposition of ferromagnetic metal (FM), where FM is the cobalt (Co) or permalloy Ni78Fe22, onto ferroelectric ceramic based on lead zirconate titanate (PZT) have been studied. The polished ferroelectric plates in thickness from 400 to 20 μm were subjected to finished treatment by ion-beam sputtering. After plasma activation they were covered by the ferromagnetic films from 1 to 6 μm in thickness. Enhanced characteristics of these structures were reached by means of both the thickness optimization of ferroelectric and ferromagnetic layers and obtaining of ferromagnetic/ferroelectric interfaces being free from defects and foreign impurities. Assuming on the basis of analysis of elastic stresses in the ferromagnetic film that the magnetoelectric effect forms within ferromagnetic/ferroelectric interface, the structures with 2–3 ferromagnetic layers were obtained. In layered heterostructure (Py/PZT/Py)3, the optimal thickness of ferromagnetic film was 2 μm, and outer and inner ferroelectric layers had 20 μm and 80 μm in thickness, respectively. For such structure the maximal magnetoelectric voltage coefficient of 250 mV/(cm Oe) was reached at a frequency 100 Hz in magnetic field of 0.25 T at room temperature. The structures studied can serve as energy-independent elements detecting the change of magnetic or electric fields in electronic devices based on magnetoelectric effect.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 63 , Issue 2 , August 2013 , 21301
Copyright
© EDP Sciences, 2013

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