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Formation of AlxGa1−xSb films over GaSb substrates by Al diffusion

Published online by Cambridge University Press:  15 July 2004

C. M. Ruiz ,
N. P. Barradas ,
E. Alves ,
J. L. Plaza ,
V. Bermúdez  and
E. Diéguez
C. M. Ruiz*
Affiliation:
Dep. Física de Materiales, Facultad de Ciencias, Universidad Autónoma de Madrid, 28049 Madrid, Spain Instituto Tecnológico e Nuclear, E. N. 10, 2685-953 Sacavém, Portugal
N. P. Barradas
Affiliation:
Instituto Tecnológico e Nuclear, E. N. 10, 2685-953 Sacavém, Portugal Centro de Física Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa, Portugal
E. Alves
Affiliation:
Instituto Tecnológico e Nuclear, E. N. 10, 2685-953 Sacavém, Portugal Centro de Física Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa, Portugal
J. L. Plaza
Affiliation:
Nanoscale Physics Research Laboratory, School of Physics and Astronomy The University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK
V. Bermúdez
Affiliation:
Dep. Física de Materiales, Facultad de Ciencias, Universidad Autónoma de Madrid, 28049 Madrid, Spain
E. Diéguez
Affiliation:
Dep. Física de Materiales, Facultad de Ciencias, Universidad Autónoma de Madrid, 28049 Madrid, Spain
*
[email protected]
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Abstract

GaSb and AlSb are very interesting semiconductors widely used in multiple applications such as optoelectronics or thermophotovoltaic cells. AlSb has higher band gap than GaSb but very similar lattice parameter, which allows the fabrication of lattice-matched films with different energy band gap over GaSb substrates. Moreover the ternary alloys, in the system AlxGa1−xSb, are very interesting for semiconductor device engineering where the capacity of creating lattice-matched heterostructures with different band gap is very important. In this work, we present a study on the formation of AlxGa1−xSb films on GaSb substrates by Al diffusion. Al thin films were evaporated over GaSb substrates and then annealed with different time and temperature conditions. RBS measurements has been performed to analyze the diffusion profile and to calculate the thickness of the AlxGa1−xSb films. The dependence of the characteristics of the films with annealing time and temperature is analyzed. EDAX and XRD analysis have been performed to calculate the specific composition of the alloy depending on the film growth parameters

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 423 - 426
Copyright
© EDP Sciences, 2004

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References

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