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Engineering of Bi2Se3 nanowires by laser cutting

Published online by Cambridge University Press:  01 April 2014

Piet Schönherr ,
Alexander A. Baker ,
Patryk Kusch ,
Stephanie Reich  and
Thorsten Hesjedal
Piet Schönherr
Affiliation:
Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany Research Complex at Harwell, Rutherford Appleton Laboratory, Didcot, Oxfordshire OX11 0FA, UK
Alexander A. Baker
Affiliation:
Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK Research Complex at Harwell, Rutherford Appleton Laboratory, Didcot, Oxfordshire OX11 0FA, UK
Patryk Kusch
Affiliation:
Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany
Stephanie Reich
Affiliation:
Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany
Thorsten Hesjedal*
Affiliation:
Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK Research Complex at Harwell, Rutherford Appleton Laboratory, Didcot, Oxfordshire OX11 0FA, UK
*
ae-mail: [email protected]
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Abstract

We present a method to control the length and diameter of Bi2Se3 nanowires through laser-cutting. Nanowires of the topologically insulating and thermoelectric material Bi2Se3 were grown using the vapor-liquid-solid method, and cut using a 532-nm-laser operating at a minimum power of 1 μW. The cutting process can be controlled through laser intensity and exposure time, and is based upon evaporation of Se from the nanowires. This method has many applications from pure research to device engineering.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 66 , Issue 1 , April 2014 , 10401
Copyright
© EDP Sciences, 2014

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