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Annealing of radiation damage in MOS devices: Study by diode parameter determination

Published online by Cambridge University Press:  15 January 1999

E. Bendada  and
K. Raïs
E. Bendada
Affiliation:
Département de Génie Électrique, Université My Ismaïl-F.S.T, BP 509, Errachidia, Marocco
K. Raïs
Affiliation:
Laboratoire de Caractérisation des Composants à Semiconducteurs, Université Chouaïb Doukkali, BP 20, El Jadida, Marocco
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Abstract

Previous modeling techniques of P–N junctions have been applied for studying the annealing of Gamma-ray damage in power MOSFETs. The degradation of the physical parameters of the body-drain junction for a dose rate of 103.8 rad/min is presented. Large decrease of the reverse recombination current, of the series resistance and of the ideality factor are shown to be related to the thermal anneal. These effects are discussed and explained by the evolution of the radiation-induced defects.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 5 , Issue 1 , January 1999 , pp. 91 - 94
Copyright
© EDP Sciences, 1999

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