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Temperature measurement in AlGaN/GaNHigh-Electron-Mobility Transistors using micro-Raman scattering spectroscopy

Published online by Cambridge University Press:  11 March 2005

R. Aubry ,
C. Dua ,
J.-C. Jacquet ,
F. Lemaire ,
P. Galtier ,
B. Dessertenne ,
Y. Cordier ,
M.-A. DiForte-Poisson  and
S. L. Delage
R. Aubry*
Affiliation:
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
C. Dua
Affiliation:
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
J.-C. Jacquet
Affiliation:
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
F. Lemaire
Affiliation:
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
P. Galtier
Affiliation:
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
B. Dessertenne
Affiliation:
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
Y. Cordier
Affiliation:
CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne, France
M.-A. DiForte-Poisson
Affiliation:
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
S. L. Delage
Affiliation:
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
*
[email protected]
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Abstract

High power RF device performance decreases as operation temperature increases (e.g. decreasing electron mobility affects cut-off frequencies and degrades device reliability). Therefore determination of device temperature is a key issue for device topology optimisation. In this work the temperature variation of AlGaN/GaN high-electron-mobility transistors grown either on silicon or sapphire substrate under bias operation was measured by micro Raman scattering spectroscopy. Temperature measurements up to power dissipation of 16 W for 4 mm development devices were carried out and a peak temperature of 650 K was determined. The difference of thermal resistance for similar devices grown on the two different substrates was assessed. The thermal resistances of different device topologies were compared to optimise the component design.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 30 , Issue 2 , May 2005 , pp. 77 - 82
Copyright
© EDP Sciences, 2005

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