Article contents
Structural characterisation of $(11{\bar 2}0)$
4H-SiC substrates bycathodoluminescence and X-ray topography
Published online by Cambridge University Press: 15 July 2004
Abstract
Silicon Carbide (SiC) is a wide band gap
semiconductor, having opto-electronic properties that are suitable for
many applications. Some structural defects due to crystal growth
and/or doping technologies are commonly present in the substrates
of SiC. The $(11\bar{2}0)$-oriented 4H-SiC bulk wafers are
particularly investigated, due to some advantages with respect to
the (0001)-Si face. One of these advantages is a better crystal
reordering during post-implantation annealing. In this paper
cathodoluminescence (CL) and X-Ray topography measurements have
been carried out in order to investigate the optical and
structural properties of commercial $(11\bar{2}0)$
4H n+-type
substrates.
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- Research Article
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- © EDP Sciences, 2004
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