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High performance LTPS TFT with very large grains producedby sequential lateral crystallization

Published online by Cambridge University Press:  14 September 2005

S. J. Park ,
S. H. Kang ,
Y. M. Ku  and
J. Jang
S. J. Park*
Affiliation:
Advanced Display Research Center and Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
S. H. Kang
Affiliation:
Advanced Display Research Center and Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Y. M. Ku
Affiliation:
Advanced Display Research Center and Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
J. Jang
Affiliation:
Advanced Display Research Center and Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
*
[email protected] [email protected]
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Abstract

We report the structural and electrical properties of polycrystalline silicon on glass crystallized by using a CW Nd:YVO4 laser. Various microstructures appear on amorphous silicon after a scanning of the laser regardless of the crystallization process parameters such as laser power and scan speed. The crystallized region could be characterized by their grain size as 3 distinct regions; RTA-SPC (rapid thermal annealed-solid phase crystallization) region, small-grain region and SLC (sequential lateral crystallization) region with very large grains of ~10 μm. To verify its electrical properties, p-ch TFTs were fabricated on the 3 different regions. The characteristics of TFTs on SLC region were superior to those on other regions and average performances of SLC poly-Si TFTs were $u_{\rm fe} = 132$  cm2/V s, $V_{\rm th} = -4.6$  V, S.S. = 0.5 V/dec, and $I_{\rm off} =\,\sim 1$  pA/μm at $V_{d} = -10$  V, respectively.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 31 , Issue 3 , September 2005 , pp. 165 - 168
Copyright
© EDP Sciences, 2005

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