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Effect of carrier transfer on the PL intensity in self-assembledIn (Ga) As/GaAs quantum rings

Published online by Cambridge University Press:  23 August 2006

W. Ouerghui ,
J. Martinez-Pastor ,
J. Gomis ,
A. Melliti ,
M. A. Maaref ,
D. Granados  and
J. M. Garcia
W. Ouerghui*
Affiliation:
Unité de Recherche des Physiques des Semiconducteurs et Capteurs, Institut Préparatoire aux Études Scientifiques et Techniques, La Marsa 2070, Tunis, Tunisia
J. Martinez-Pastor
Affiliation:
Instituto de Ciencia de los Materials, Universidad de Valencia, PO Box 22085, 46071 Valencia, Spain
J. Gomis
Affiliation:
Instituto de Ciencia de los Materials, Universidad de Valencia, PO Box 22085, 46071 Valencia, Spain
A. Melliti
Affiliation:
Unité de Recherche des Physiques des Semiconducteurs et Capteurs, Institut Préparatoire aux Études Scientifiques et Techniques, La Marsa 2070, Tunis, Tunisia
M. A. Maaref
Affiliation:
Unité de Recherche des Physiques des Semiconducteurs et Capteurs, Institut Préparatoire aux Études Scientifiques et Techniques, La Marsa 2070, Tunis, Tunisia
D. Granados
Affiliation:
Instituto de Microelectrónica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain
J. M. Garcia
Affiliation:
Instituto de Microelectrónica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain
*
[email protected]
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Abstract

We present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the small-ring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 35 , Issue 3 , September 2006 , pp. 159 - 163
Copyright
© EDP Sciences, 2006

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