X-ray diffraction characterization of MOVPE ZnSe films deposited on (100) GaAs using conventional and high-resolution diffractometers

T. N. Blanton; C. L. Barnes; M. Holland; K. B. Kahen; S. K. Gupta; F. Bai

doi:10.1154/1.3125551

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X-ray diffraction characterization of MOVPE ZnSe films deposited on (100) GaAs using conventional and high-resolution diffractometers

Volume 24, Special Issue 2
T. N. Blanton ^(a1), C. L. Barnes ^(a1), M. Holland ^(a1), K. B. Kahen ^(a1), S. K. Gupta ^(a2) and F. Bai ^(a2)
DOI: https://doi.org/10.1154/1.3125551

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X-ray diffraction characterization of MOVPE ZnSe films deposited on (100) GaAs using conventional and high-resolution diffractometers

Volume 24, Special Issue 2
T. N. Blanton ^(a1), C. L. Barnes ^(a1), M. Holland ^(a1), K. B. Kahen ^(a1), S. K. Gupta ^(a2) and F. Bai ^(a2)
DOI: https://doi.org/10.1154/1.3125551

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

X-ray diffraction characterization of MOVPE ZnSe films deposited on (100) GaAs using conventional and high-resolution diffractometers

Volume 24, Special Issue 2
T. N. Blanton ^(a1), C. L. Barnes ^(a1), M. Holland ^(a1), K. B. Kahen ^(a1), S. K. Gupta ^(a2) and F. Bai ^(a2)
DOI: https://doi.org/10.1154/1.3125551

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