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Strain effects in thin film/Si substrates revealed by X-ray microdiffraction

Published online by Cambridge University Press:  06 March 2012

C. E. Murray*
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
I. C. Noyan
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
B. Lai
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439
Z. Cai
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439
*
a)Electronic mail: [email protected]

Abstract

The local variation in strain and rotation of the Si substrate due to overlying Ni thin film features has been observed using X-ray microdiffraction. Residual tensile stress in 1 μm thick, 190 μm diameter Ni dots of 990 MPa imparted an average compressive stress in the underlying Si substrate. Ni Kα fluorescence scans, acquired simultaneously with Si (333) diffraction data, allow for a precise determination of the Ni feature edge location relative to the observed shift in Si (333) peak position. Rocking curve mesh scans, in which the sample was translated perpendicular and parallel to the diffraction plane, were used to deconvolute the effects of substrate strain due to d-spacing shifts and rotation of the local Si surface. In addition, shear strains at the dot edge imparted a significant shift in the Si (333) diffraction peak, producing a secondary diffraction peak in modified reciprocal space scans.

Type
Technical Articles
Copyright
Copyright © Cambridge University Press 2004

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