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Preparation and crystal structure of SbV1.50InIII0.50(PO4)3 and (SbV0.50InIII0.50)P2O7

Published online by Cambridge University Press:  29 February 2012

Abderrahim Aatiq ,
Rachid Bakri  and
Aaron Richard Sakulich
Abderrahim Aatiq
Affiliation:
Département de Chimie, Laboratoire de Chimie des Matériaux Solides, Université HassanII-Mohammédia, Faculté des Sciences Ben M'Sik, Avenue Idriss El harti, B.P. 7955, Casablanca, Morocco
Rachid Bakri
Affiliation:
Département de Chimie, Laboratoire de Chimie des Matériaux Solides, Université HassanII-Mohammédia, Faculté des Sciences Ben M'Sik, Avenue Idriss El harti, B.P. 7955, Casablanca, Morocco
Aaron Richard Sakulich
Affiliation:
Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104
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Abstract

Synthesis and structure of two phosphates belonging to the ternary Sb2O5–In2O3–P2O5 system are realized. Structures of SbV1.50InIII0.50(PO4)3 and (SbV0.50InIII0.50)P2O7 phases, obtained by solid state reaction in air at 950 °C, were determined at room temperature from X-ray powder diffraction using the Rietveld method. SbV1.50InIII0.50(PO4)3 have a monoclinic (space group P21/n) distortion of the Sc2(WO4)3-type framework. Its structure is constituted by corner-shared SbO6 or InO6 octahedra and PO4 tetrahedra. Monoclinic unit cell parameters are a=11.801(2) Å, b=8.623(1) Å, c=8.372(1) Å, and β=90.93(1)°. (Sb0.50In0.50)P2O7 is isotypic with (Sb0.50Fe0.50)P2O7 and crystallizes in orthorhombic system (space group Pna21) with a=7.9389(1) Å, b=16.0664(2) Å, and c=7.9777(1) Å. Its structure is built up from corner-shared SbO6 or InO6 octahedra and P2O7 groups (two group-types). Each P2O7 group shares its six vertices with three SbO6 and three InO6 octahedra, and each octahedron is connected to six P2O7 groups.

Keywords

X-ray powder diffractionantimony and indium phosphateordered distributionpyrophosphate
Type
TECHNICAL ARTICLES
Information
Powder Diffraction , Volume 23 , Issue 3 , September 2008 , pp. 232 - 240
Copyright
Copyright © Cambridge University Press 2008

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