Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by Crossref.
Wang, Gang
and
Chen, Xiaolong
2010.
Single‐crystal growth: From new borates to industrial semiconductors.
physica status solidi (a),
Vol. 207,
Issue. 12,
p.
2757.
Song, B.
Chen, X.L.
Han, J.C.
Wang, G.
Bao, H.Q.
Duan, L.B.
Zhu, K.X.
Li, H.
Zhang, Z.H.
Wang, W.Y.
Wang, W.J.
Zhang, X.H
and
Meng, S.H.
2011.
Raman scattering and magnetizations studies of (Al, Cr)-codoped 4H-SiC.
Journal of Magnetism and Magnetic Materials,
Vol. 323,
Issue. 22,
p.
2876.
Wang, J.
Zhao, M.
Jin, S. F.
Li, D. D.
Yang, J. W.
Hu, W. J.
and
Wang, W. J.
2014.
Debye temperature of wurtzite AlN determined by X-ray powder diffraction.
Powder Diffraction,
Vol. 29,
Issue. 4,
p.
352.
Miranda, P.A.
Wahl, U.
Catarino, N.
Ribeiro da Silva, M.
and
Alves, E.
2014.
Performance of resistive-charge position sensitive detectors for RBS/Channeling applications.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,
Vol. 760,
Issue. ,
p.
98.
Abbate, C.
Busatto, G.
Cova, P.
Delmonte, N.
Giuliani, F.
Iannuzzo, F.
Sanseverino, A.
and
Velardi, F.
2015.
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes.
IEEE Transactions on Nuclear Science,
Vol. 62,
Issue. 1,
p.
202.
Sun, Liang
Gao, Yimin
Li, Yefei
Yoshida, Katsumi
Yano, Toyohiko
and
Yi, Dawei
2016.
Structural, bonding, anisotropic mechanical and thermal properties of Al4SiC4 and Al4Si2C5 by first-principles investigations.
Journal of Asian Ceramic Societies,
Vol. 4,
Issue. 3,
p.
289.
Wang, Kun-lun
Huang, Xian-bin
Li, Jing
Xu, Qiang
Dan, Jia-kun
and
Ren, Xiao-dong
2017.
Monte Carlo simulation of an anharmonic Debye–Waller factor to the T
4 order.
Acta Crystallographica Section A Foundations and Advances,
Vol. 73,
Issue. 2,
p.
151.
Costa, A R G
Wahl, U
Correia, J G
Bosne, E
Amorim, L M
Augustyns, V
Silva, D J
da Silva, M R
Bharuth-Ram, K
and
Pereira, L M C
2017.
Lattice location of implanted transition metals in 3C–SiC.
Journal of Physics D: Applied Physics,
Vol. 50,
Issue. 21,
p.
215101.
Xu, Wei-Wei
Xia, Fangfang
Chen, Lijie
Wu, Meng
Gang, Tieqiang
and
Huang, Yongfang
2018.
High-temperature mechanical and thermodynamic properties of silicon carbide polytypes.
Journal of Alloys and Compounds,
Vol. 768,
Issue. ,
p.
722.
Lin, Long
Zhu, Linghao
Zhao, Ruiqi
Tao, Hualong
Huang, Jingtao
Xu, Yonghao
and
Zhang, Zhanying
2018.
First-principles study on ferromagnetism in 4H-SiC codoped with Al and Mn.
New Journal of Chemistry,
Vol. 42,
Issue. 12,
p.
9393.
Liu, Chun Jun
Peng, T.H.
Wang, B.
Guo, Y.
Lou, Y.F.
Zhao, N.
Wang, W.J.
and
Chen, Xiao Long
2019.
Progress in Single Crystal Growth of Wide Bandgap Semiconductor SiC.
Materials Science Forum,
Vol. 954,
Issue. ,
p.
35.
Gorai, S.
and
Bhattacharya, C.
2019.
Shock induced phase transition in SiC polytypes.
Journal of Applied Physics,
Vol. 125,
Issue. 18,
Lin, Long
Xie, Kun
Zhu, Linghao
Huang, Jingtao
Li, Lixin
Yu, Weiyang
and
Tao, Hualong
2020.
First-principles study of electronic structures and ferromagnetism in (Cr, X) (X= Ga, In) co-doped 4H–SiC.
Solid State Communications,
Vol. 313,
Issue. ,
p.
113878.
Huang, Yuhua
Wang, Miaocao
Li, Jinming
and
Zhu, Fulong
2021.
Effect of inclusion on 4H-SiC during nano-scratching from an atomistic perspective.
Journal of Physics: Condensed Matter,
Vol. 33,
Issue. 43,
p.
435402.
Huang, Yuhua
Wang, Miaocao
Li, Jinming
and
Zhu, Fulong
2021.
Removal behavior of micropipe in 4H-SiC during micromachining.
Journal of Manufacturing Processes,
Vol. 68,
Issue. ,
p.
888.
Hashemi, Arsalan
Linderälv, Christopher
Krasheninnikov, Arkady V.
Ala-Nissila, Tapio
Erhart, Paul
and
Komsa, Hannu-Pekka
2021.
Photoluminescence line shapes for color centers in silicon carbide from density functional theory calculations.
Physical Review B,
Vol. 103,
Issue. 12,
Moharana, Gyanti Prakash
Kothari, Rahul
Singh, S.K.
Babu, P.D.
and
Narayanan, Harish Kumar
2022.
F+ center exchange mechanism and magnetocrystalline anisotropy in Ni-doped 3C-SiC.
Journal of Magnetism and Magnetic Materials,
Vol. 555,
Issue. ,
p.
169358.
Jiang, Liwu
Shi, Peng
Zhang, Chuan-Hui
and
Wu, Meiling
2023.
First-principles study on interfacial structure and strength of SiC/VC nano-layered hard coatings.
Computational Materials Science,
Vol. 230,
Issue. ,
p.
112532.
Huang, Yuhua
Zhou, Yuqi
Li, Jinming
and
Zhu, Fulong
2023.
Understanding the role of surface mechanical properties in SiC surface machining.
Materials Science in Semiconductor Processing,
Vol. 163,
Issue. ,
p.
107594.
Yu, Jiajie
Dai, Xiyue
Li, Jiayuan
Luo, Anqi
Ouyang, Yifang
and
Zhou, Yulu
2023.
Comparison and Assessment of Different Interatomic Potentials for Simulation of Silicon Carbide.
Materials,
Vol. 17,
Issue. 1,
p.
150.