Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-12-01T06:23:20.292Z Has data issue: false hasContentIssue false
  • English
  • Français

Confirmation of the new technique for measuring the linear thermal expansion of silicon

Published online by Cambridge University Press:  10 January 2013

Liu Fengchao
Liu Fengchao
Affiliation:
Department of Physics, South China Normal University, Guangzhou 510631, China
Get access Rights & Permissions [Opens in a new window]

Abstract

This paper further confirms that the direct measurement of diffraction angles at different temperatures by using the X-ray diffractometer is better than measurement of the lattice parameters for the rapid and accurate determination of the linear thermal expansion of silicon. High purity silicon has the linear expansion coefficient, α= (2.45±0.05) × 10−6/°C at room temperature. This value does not change for doped P-type and N-type silicon.

Type
Research Article
Information
Powder Diffraction , Volume 8 , Issue 1 , March 1993 , pp. 36 - 38
Copyright
Copyright © Cambridge University Press 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Chen, Lijun (1987). “Explanation of the state standard of the People's Republic of China of No. GB8360-87” (internal report, unpublished).Google Scholar
Huang, K., and Han, R. (1988). Solid Physics (Chinese) 1st Ed., pp. 122, 140, 284.Google Scholar
Hubbard, Swanson, and Mauer, (1975). J. Appl. Cryst. 8, 45–48.Google Scholar
James, R. W. (1954). The Optical Principles of the Diffraction of X-rays (G. Bell, London), p. 155.Google Scholar
Liu, F., and Zheng, B. (1991). Powder Diffr. 6, 147–152.Google Scholar
Parrish, W. (1960). Acta. Crystallogr. 13, 838–850.CrossRefGoogle Scholar
Shaw, N. (Xiao Nan), and Liu, Y.-H. (1965). Scientia Sinica Vol. XIV, No. 11, 1582–1589 (First Published in Chinese in Acta Physica Silica, Vol. 20, No. 8, pp. 699–704, 1964).Google Scholar
Tao, K. (1980). Chinese J. Tsing Hua Univ. 20(2), 103.Google Scholar
Weyerer, H. (1960). Acta Crystallogr. 13, 821–823.Google Scholar
Yim, W. M., and Paff, R. J. (1974). J. Appl. Phys. 45 (3), 1456–1457.Google Scholar