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Residual stresses in a SiC whisker-reinforced alumina composite by high-temperature X-ray diffraction

Published online by Cambridge University Press:  10 January 2013

Benjamin L. Ballard ,
Paul K. Predecki  and
Camden R. Hubbard
Benjamin L. Ballard
Affiliation:
University of Denver, Engineering Department, Denver, Colorado 80210
Paul K. Predecki
Affiliation:
University of Denver, Engineering Department, Denver, Colorado 80210
Camden R. Hubbard
Affiliation:
HTML, Oak National Laboratory, Oak Ridge, Tennessee 37831
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Abstract

Residual strains and microstresses are evaluated for both phase of a hot-pressed, fine-grained α-alumina reinforced with 25 wt% (29 vol%) single-crystal silicon carbide whiskers at temperatures from 25 to 1000 °C. The sample was maintained in a nonoxidizing environment while measurements of the interplaner spacing of alumina (146) and SiC (511 + 333) were made using X-ray diffraction methods. The residual strains were profiled at temperature increments of 250 °C from which the corresponding microstresses were calculated. Linear extrapolation of the SiC ε33 profile indicates that the strains are completely relaxed at a temperature of approximately 1470 °C. These residual stress relaxation results suggest that elevated temperature toughness and fracture strength of this composite may result from cooperative mechanisms.

Keywords

residual stressstrainalumina/silicon carbide compositetemperatureX-ray diffraction
Type
Research Article
Information
Powder Diffraction , Volume 9 , Issue 1 , March 1994 , pp. 50 - 53
Copyright
Copyright © Cambridge University Press 1994

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