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Growth kinetics of Cu2ZnSnS4 thin films and powders

Published online by Cambridge University Press:  14 November 2013

M. Müller
Affiliation:
Department of Civil, Environmental and Mechanical Engineering, University of Trento, via Mesiano 77, 38123 Trento, Italy Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart, Germany
C. L. Azanza Ricardo
Affiliation:
Department of Civil, Environmental and Mechanical Engineering, University of Trento, via Mesiano 77, 38123 Trento, Italy
R. Di Maggio
Affiliation:
Department of Civil, Environmental and Mechanical Engineering, University of Trento, via Mesiano 77, 38123 Trento, Italy
P. Scardi
Affiliation:
Department of Civil, Environmental and Mechanical Engineering, University of Trento, via Mesiano 77, 38123 Trento, Italy

Abstract

The growth kinetics of Cu2ZnSnS4 thin films and powders was studied using in-situ synchrotron data. Isothermal and isochronal measurements were performed at the MCX beamline of the Elettra synchrotron (Trieste, Italy). Diffraction line profile analysis was used to follow the changes in the domain size distribution during isothermal measurements, and the change in the mean volume of the domains was studied using the Johnson-Mehl-Avrami equation. The growth was found to be diffusion controlled from small dimensions while the nucleation rate is temperature dependent. An activation energy of 210 kJ/mol could be estimated. In case of the isochronal data, the evolution of inverse of the integral breadth of the diffraction peaks in dependence on temperature was studied using the Ozawa and Šatava equations. The activation energy determined for the growth process is between 112(2) and 145(5) kJ/mol.

Type
Technical Articles
Copyright
Copyright © International Centre for Diffraction Data 2013 

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References

Avrami, M. (1939). “Kinetics of phase change: I—General theory,” J. Chem. Phys. 7, 11031112.CrossRefGoogle Scholar
Christian, J. W. (1965). The Theory of Transformations in Metals and Alloys (Pergamon, Oxford).Google Scholar
Hinrichsen, B., Dinnebier, R. E. and Jansen, M. (2006). “Powder3D: An easy to use program for data reduction and graphical presentation of large numbers of powder diffraction patterns,” Z. Kristallogr. Suppl. 23, 231236.CrossRefGoogle Scholar
Johnson, W. A. and Mehl, R. F. (1939). “Reaction kinetics in processes of nucleation and growth,” Trans. Am. Inst. Min., Metall. Pet. Eng. 135, 416458.Google Scholar
Lee, Y., and Choi, S. (1997). “Controlled nucleation and crystallization in Fe2O3–CaO–SiO2 glass,” J. Mater. Sci. 32(2), 431436.Google Scholar
Leoni, M., Confente, T. and Scardi, P. (2006). “PM2K: a flexible program implementing Whole Powder Pattern Modelling,” Z. Kristallogr. Suppl. 23 249254.Google Scholar
Maeda, K., Tanaka, K., Fukui, Y. and Uchiki, H. (2011). “Influence of H2S concentration on the properties of Cu2ZnSnS4 thin films and solar cells prepared by sol–gel sulfurization,” Sol. Energy Mater. Sol. Cells, 95(10), 28552860.Google Scholar
Olekseyuk, I., Dudchak, I. and Piskach, L. V. (2004). “Phase equilibria in the Cu2S–ZnS–SnS2 system,” J. Alloys Compd. 368, 135143.CrossRefGoogle Scholar
Ozawa, T. (1965). “A New Method of Analyzing Thermogravimetric Data,” Bull. Chem. Soc. Jpn. 38 18811886.CrossRefGoogle Scholar
Rodríguez, C., Sanchez, E., Hernández, J., Prokhorov, E., Saldaña, J. and Martínez, G. (2012). “Estimate of the Crystallization Kinetics in Stoichiometry Compositions Films of Ge:Sb:Te,” J. Surf. Eng. Mater. Adv. Technol. 2(1), 4446.Google Scholar
Šatava, V. (1971). “Mechanism and kinetics from non-isothermal TG traces,” Thermochim. Acta 2 423428.Google Scholar
Scardi, P. and Leoni, M. (2002). “Whole powder pattern modeling,” Acta Crystallogr., Sect. A: Found. Crystallogr. 58, 190200.Google Scholar
Scardi, P., Leoni, M., Müller, M. and Di Maggio, R. (2010). “In situ size-strain analysis of nanocrystalline ceria growth,” Mater. Sci. Eng., A 528(1), 7782.Google Scholar
Spassov, T., Lyubenova, L., Köster, U. and Baró, M. D. (2004). “Mg–Ni–RE nanocrystalline alloys for hydrogen storage,” Mater. Sci. Eng., A 375–377 794799.CrossRefGoogle Scholar
Sugimoto, H., Hiroi, H., Sakai, N., Muraoka, S., Katou, T. (2012) “Over 8% efficiency Cu2ZnSnS4 submodules with ultra-thin absorber,” IEEE Photovoltaic Spec. Conf., 38th , 29973000.Google Scholar
Todorov, T. K., Reuter, K. B. and Mitzi, D. B. (2010). “High-Efficiency Solar Cell with Earth-Abundant Liquid-Processed Absorber,” Adv. Mater., 22(20), E156E159.Google Scholar
Wang, K., Shin, B., Reuter, K. B., Todorov, T. K., Mitzi, D. B. and Guha, S. (2011). “Structural and elemental characterization of high efficiency Cu2ZnSnS4 solar cells,” Appl. Phys. Lett. 98(5), 051912.Google Scholar
Weber, A., Mainz, R., Unold, T., Schorr, S. and Schock, H.-W. (2009). “In-situ XRD on formation reactions of Cu2ZnSnS4 thin films,” Phys. Status Solidi C 6(5), 12451248.Google Scholar
Woo, K., Kim, Y. and Moon, J. (2012). “A non-toxic, solution-processed, earth abundant absorbing layer for thin-film solar cells,” Energy Environ. Sci. 5(1), 53405345.CrossRefGoogle Scholar