Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance
Research Article
Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation
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- 22 February 2011, 311
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Defects and Diffusion in Si+ Implanted GaAs
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- 22 February 2011, 323
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Differences of Damage Production in GaAs and InP after MeV and Low Energy Ion Implantation
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- 22 February 2011, 331
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Reliability of Implant-Isolation Regions in Highly-Doped GaAs-Based Structures
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- 22 February 2011, 337
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Differential Reflectance Studies of Structural Changes in GaAs Caused by Ar+ Ion Bombardment
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- 22 February 2011, 345
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Rapid Thermal Annealing of InP Implanted with Group IV Eleients
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- 22 February 2011, 351
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Optical Characterization of 100 eV C+ Ion Doped GaAs
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- 22 February 2011, 357
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Modeling Dopant Diffusion in Gallium Arsenide
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- 22 February 2011, 365
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Thermal Equilibrium Concentrations and Effects of Ga Vacancies in n-TYPE GaAs
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- 22 February 2011, 377
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Energetics of Impurity-Free Vacancy-Mediated Disordering of AlGaAs/GaAs Superlattices
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- 22 February 2011, 391
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Time Dependent Diffusion of P-Type Dopants in Gallium Arsenide
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- 22 February 2011, 397
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Layer Disordering and Carrier Concentration in Heavily Carbon-Doped AlGaAs/GaAs Superlattices
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- 22 February 2011, 409
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Si-Induced AlGaAs/GaAs Superlaitce Disordering Using a Grown-In Impurity Source and the Effects of Annealing Ambient
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- 22 February 2011, 415
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Application of the Amphoteric Native Defect Model to Diffusion and Activation of Shallow Impurities in III-V Semiconductors
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- 22 February 2011, 421
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Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy
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- 22 February 2011, 435
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Sulfur Passivation of InP and GaAs
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- 22 February 2011, 441
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Deposition of Tin by Electron Cyclotron Resonance - Metal Organic Molecular Beam Epitaxy
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- 22 February 2011, 447
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Chemical Beam Epitaxy Grown Indium Gallium Arsenide Tunnel Junctions
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- 22 February 2011, 453
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Investigation of Carbon Incorporation into GaAs by TEGa-AsH3 Based Low Pressure Metalorganic Chemical Vapor Deposition
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- 22 February 2011, 459
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Gas-Phase Generation of Nanometer-Sized Metal Particles for Fabrication of Zero-Dimensional Quantum Structures
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- 22 February 2011, 465
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