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Defects and Diffusion in Si+ Implanted GaAs

Published online by Cambridge University Press:  22 February 2011

K.S. Jones ,
H.G. Robinson ,
T.E. Haynes ,
M.D. Deal ,
C.C. Lee  and
E.L. Allen
K.S. Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
H.G. Robinson
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
T.E. Haynes
Affiliation:
Oak Ridge National Laboratories, Oak Ridge, TN
M.D. Deal
Affiliation:
Stanford University, Stanford, CA
C.C. Lee
Affiliation:
Stanford University, Stanford, CA
E.L. Allen
Affiliation:
San Jose State University, San Jose, CA
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Abstract

The effect of extended defects on the diffusion of ion implanted species is an area of concern in the development of process simulators for GaAs. This study explores the effect of type I extended defects including voids and dislocation loops on the diffusion of Si implanted into GaAs. <100> Semi-insulating GaAs wafers were implanted with 1 × 1014/cm2 Si+ at implant temperatures between -51°C and 80°C and at energies ranging from 20 keV to 200 keV. SIMS results show that the diffusivity of Si decreases with both increasing implant temperature and increasing implant energy. At the same time extrinsic dislocation loop concentrations also increased. For the implant conditions studied, no voids were observed. The diffusion results can only be reconciled with the TEM results if the dislocation loops are behaving in a reactive rather than proactive manner. In other words, the changes in vacancy concentration that are affecting the diffusivity are also affecting the loop concentration. This model is supported by evidence that Si diffusivity is enhanced over the same time interval the dislocation loops are dissolving which is consistent with the loops having a reactive role. It remains unclear whether the existence of loops significantly affects the total concentration of vacancies and thus diffusion by acting as a competing sink.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 323
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Chen, S., Lee, S.-T., Braunstein, G., Ko, K. Y. and Tan, T. Y., J. Appl. Phys. 70, 656 (1991).Google Scholar
2. Jones, K. S. and Rozgonyi, G. A., Extended Defects from Ion Implantation and Annealing (Academic Press, Orlando, 1992).Google Scholar
3. Jones, K. S., Bollong, M., Haynes, T. E., Deal, M. D., Allen, E. L. and Robinson, H. G., in Advanced Ill-V Compound Semiconductor Growth. Processing and Devices, edited by Pearton, S. J., Zavada, J. and Sadana, D. K. (Materials Research Society, Pittsburgh, 1992), p. 785.Google Scholar
4. Jones, K. S., Prussin, S. and Weber, E. R., Appl. Phys. A 45, 1 (1988).Google Scholar
5. Ko, K. Y., Chen, S., Braunstein, G., Zheng, L.-R. and Lee, S., Mat. Res. Soc. Symp. Proc. 262, 1085 (1992).Google Scholar
6. Pearton, S. J., Sol. Stat. Phen. 1&2, 247 (1988).Google Scholar
7. Miyazawa, S. and Wada, K., Appl. Phys. Lett. 48, 905 (1986).Google Scholar
8. Hyuga, F., J. Appl. Phys. 64, 3880 (1988).Google Scholar
9. Morrow, R. A., J. Appl. Phys. 64, 6254 (1988).Google Scholar
10. Chen, S., Lee, S.-T., Braunstein, G., Ko, K.-Y., Zheng, L. R. and Tan, T. Y., Jpn. J. Appl. Phys. 29, L1950 (1990).Google Scholar