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Zinc Oxide Thin Films used as an Ozone Sensor at Room Temperature

Published online by Cambridge University Press:  01 February 2011

Ana Claudia Pimentel
Affiliation:
[email protected], FCT-UNL, Materials Science, Campus da Caparica, Caparica, na, 2829-516, Portugal, +351212948562, +351212948558
Alexandra Gonçalves
Affiliation:
[email protected], FCT-UNL, Materials Science, Campus da Caparica, Caparica, na, 2829-516, Portugal
António Marques
Affiliation:
[email protected], FCT-UNL, Materials Science, Campus da Caparica, Caparica, na, 2829-516, Portugal
Rodrigo Martins
Affiliation:
[email protected], FCT-UNL, Materials Science, Campus da Caparica, Caparica, na, 2829-516, Portugal
Elvira Fortunato
Affiliation:
[email protected], FCT-UNL, Materials Science, Campus da Caparica, Caparica, na, 2829-516, Portugal
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Abstract

In this paper we present results of intrinsic/non doped zinc oxide deposited at room temperature by rf magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors and ultra-violet detectors. The produced films are polycrystalline with a c-axis preferential orientation parallel to the substrate. The films present a resistivity that varies from 4.0×10−2 Ωcm to 1.0×109 Ωcm depending on the deposition conditions used in this study (rf power density and oxygen partial pressure) without changing the optical properties (an average transmittance of 85 % and an optical band gap energy ≈3.44 eV). When exposed to UV light the sensor response exceeds more than 5 orders of magnitude recovering to the initial state in the presence of ozone. The sensitivity of the films is improved when the oxygen partial pressure increases and the rf power density decreases which are directly related to the structural properties of the films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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