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Zeeman splittings of the 5D0–7F2 transitions of Eu3+ ions implanted into GaN

Published online by Cambridge University Press:  02 March 2011

V. Kachkanov ,
K.P. O’Donnell ,
C. Rice ,
D. Wolverson ,
R.W. Martin ,
K. Lorenz ,
E. Alves  and
M. Bockowski
V. Kachkanov
Affiliation:
Diamond Light Source Ltd, Didcot OX11 0DE, United Kingdom
K.P. O’Donnell
Affiliation:
SUPA Department of Physics, University of Strathclyde, Glasgow G4 0NG, United Kingdom
C. Rice
Affiliation:
Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
D. Wolverson
Affiliation:
Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
R.W. Martin
Affiliation:
SUPA Department of Physics, University of Strathclyde, Glasgow G4 0NG, United Kingdom
K. Lorenz
Affiliation:
Instituto Tecnológico e Nuclear, Sacavém 2686-953, Portugal
E. Alves
Affiliation:
Instituto Tecnológico e Nuclear, Sacavém 2686-953, Portugal
M. Bockowski
Affiliation:
Institute of High Pressure Physics, Polish Academy of Science 01-142 Warsaw, Poland
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Abstract

We report the magnetic field splittings of emission lines assigned to the 5D0–7F2 transitions of Eu3+ centres in GaN. The application of a magnetic field in the c-axis direction (B ‖ c ) leads to a splitting of the major lines at 621 nm, 622 nm and 622.8 nm into two components. The Zeeman splitting is linear with magnetic field up to 5 Tesla for each line. In contrast, a magnetic field applied in the growth plane (B ┴ c ) does not influence the photoluminescence spectra. The estimated g-factors vary slightly from sample to sample with mean values of g‖ ~2.8, ~1.5 and ~2.0 for the emission lines at 621 nm, 622 nm and 622.8 nm respectively.

Keywords

Euion-implantationnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1290: Symposium I – Magnetism and Correlated Electronic Structure of Nitrides—Rare-Earth and Transition Metals as Constituents and Dopants , 2011 , mrsf10-1290-i03-06
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Henderson, B. and Imbusch, G. F., Optical Spectroscopy of Inorganic Solids (Clarendon Press, Oxford, 1989; in Paperback 2006).Google Scholar
2. Kaminskii, A.A., Laser Crystals: Their Physics and Properties, 2nd edition (Spinger-Verlag, Berlin, 1990).Google Scholar
3. O’Donnell, K.P., Dierolf, V. (Eds.) Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications (Spinger, Dordrecht, 2010).Google Scholar
4. Heikenfeld, J., Garter, M., Lee, D. S., Birkhahn, R., and Steckl, A. J., Appl. Phys. Lett. 75, 1189 (1999).Google Scholar
5. Nishikawa, A., Kawasaki, T., Furukawa, N., Terai, Y., and Fujiwara, Y., Applied Physics Express 2 071004 (2009); A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai, and Y. Fujiwara, Appl. Phys. Lett. 97, 051113(2010); K. Lorenz, E. Alves, I. S. Roqan, K. P. O’Donnell, A. Nishikawa, Y. Fujiwara and M. Bocćkowski Appl. Phys. Lett. 97, 111911 (2010) Google Scholar
6. Wang, K., O’Donnell, K.P., Hourahine, B., Martin, R.W., Watson, I.M., Lorenz, K., Alves, E., Phys. Rev. B 80, 125206 (2009).Google Scholar
7. Roqan, I.S., O’Donnell, K.P., Martin, R.W., Edwards, P.R., Song, S.F., Vantomme, A., Lorenz, K., Alves, E., and Boćkowski, M., Phys. Rev. B 81, 085209 (2010).Google Scholar
8. Sanna, S., Schmidt, W.G., Frauenheim, T., Gerstmann, U., Phys. Rev. B 80, 104120 (2009).Google Scholar
9. Aliev, G.N., Zeng, S., Bingham, S.J., Wolverson, D., Davies, J.J., Wang, T., Parbrook, P.J., Phys. Rev. B 74, 235205 (2006)Google Scholar