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XRD analysis of TRAM composed from [Sb2Te3/GeTe] superlattice film and its switching characteristics

Published online by Cambridge University Press:  24 February 2015

T. Ohyanagi ,
M. Kitamura ,
S. Kato ,
M. Araidai ,
N. Takaura  and
K. Shiraishi
T. Ohyanagi
Affiliation:
Low-power Electronics Association & Projects, AIST West7A, Tsukuba, Japan
M. Kitamura
Affiliation:
Low-power Electronics Association & Projects, AIST West7A, Tsukuba, Japan
S. Kato
Affiliation:
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Japan
M. Araidai
Affiliation:
Department of Computational Science and Engineering, Nagoya University, Nagoya, Japan
N. Takaura
Affiliation:
Low-power Electronics Association & Projects, AIST West7A, Tsukuba, Japan
K. Shiraishi
Affiliation:
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Japan Department of Computational Science and Engineering, Nagoya University, Nagoya, Japan
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Abstract

We studied GeTe structures in topological switching random access memories (TRAMs) with a [GeTe/Sb2Te3] superlattice by using X-ray diffraction (XRD) analysis. We examined the electrical characteristics of the TRAMs deposited at different temperatures. We found that XRD spectra differed between the films deposited at 200 and 240°C and that the differences corresponded to the differences in the GeTe sequences in the films.

Keywords

memorysputteringx-ray diffraction (XRD)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1729: Symposium M – Materials and Technology for Nonvolatile Memories , 2015 , pp. 41 - 45
Copyright
Copyright © Materials Research Society 2015 

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References

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