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X-ray Topography of Strain Fields Induced by 100 MeV Ti7+ Ion Irradiated Si(100)

Published online by Cambridge University Press:  26 February 2011

B. B. Sharma ,
S. R. Gupta ,
R. K. Sharma ,
V. Kumar ,
U. Tiwari ,
P. Sen  and
G. K. Mehta
B. B. Sharma
Affiliation:
Solid State Physics Laboratory, Delhi - 110054, India.
S. R. Gupta
Affiliation:
Solid State Physics Laboratory, Delhi - 110054, India.
R. K. Sharma
Affiliation:
Solid State Physics Laboratory, Delhi - 110054, India.
V. Kumar
Affiliation:
Solid State Physics Laboratory, Delhi - 110054, India.
U. Tiwari
Affiliation:
School of Physical Sciences, Jawaharlal Nehru University, New Delhi - 110067, India.
P. Sen
Affiliation:
School of Physical Sciences, Jawaharlal Nehru University, New Delhi - 110067, India.
G. K. Mehta
Affiliation:
Nuclear Science Centre, New Delhi -110067, India.
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Abstract

The lattice deformation caused by 100 MeV Ti7+ ion irradiation in Si (100) has been studied using X-ray topographic techniques. An important finding is the appearance of a strain field perpendicular to the ion beam direction in the irradiated region well separated from the projected range of implanted ions. This in-plane strain extends in the bulk of the sample and is not merely confined to the surface. The implanted region has been found to experience an out of plane strain which is expected to be tensile in nature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 671
Copyright
Copyright © Materials Research Society 1995

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References

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