Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-09T15:31:23.474Z Has data issue: false hasContentIssue false
  • English
  • Français

X-ray standing wave investigations of Si dopant incorporation in GaN

Published online by Cambridge University Press:  01 February 2011

Michael Siebert ,
Th. Schmidt ,
J. I. Flege ,
J. Zegenhagen ,
T.-L. Lee ,
S. Figge ,
D. Hommel  and
J. Falta
Michael Siebert
Affiliation:
[email protected], University of Bremen, Institute of Solid State Physics, Otto-Hahn-Allee 1, Bremen, N/A, 28359, Germany, +49-40-8998-3125
Th. Schmidt
Affiliation:
[email protected], University of Bremen, Institute of Solid State Physics, Germany
J. I. Flege
Affiliation:
[email protected], University of Bremen, Institute of Solid State Physics, Germany
J. Zegenhagen
Affiliation:
[email protected], ESRF, France
T.-L. Lee
Affiliation:
[email protected] , ESRF, France
S. Figge
Affiliation:
[email protected], University of Bremen, Institute of Solid State Physics, Germany
D. Hommel
Affiliation:
[email protected], University of Bremen, Institute of Solid State Physics, Germany
J. Falta
Affiliation:
[email protected], University of Bremen, Institute of Solid State Physics, Germany
Get access

Abstract

The synchrotron radiation technique of x-ray standing waves (XSW), which allows to directly obtain structural and element-specific data, was successfully used for the investigation of the dopant site distribution in Si doped GaN films grown on (0001) sapphire substrates for the first time. The Si dopant concentration was chosen to 5×1018 cm-3 and 5×1019 cm-3. The measurements were performed on 300 nm thin doped films deposited on high-quality thick undoped GaN films. With this sample structure, influences of the Si dopant induced decrease of the crystalline quality on the XSW signal are suppressed. The XSW data are compared to those obtained from thick homogeneously doped GaN films. All XSW measurements were performed in (002) backscattering geometry. Independent of the dopant concentration, the results indicate that Si atoms are solely incorporated on substitutional Ga sites.

Keywords

x-ray fluorescenceIII-Vdopant
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF03-03
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Romano, L.T., Van de Walle, C.G., Ager, J.W. III, Götz, W., Kern, R.S., J. Appl. Phys. 87 (11) 7745 (2000).CrossRefGoogle Scholar
[2] Batterman, B.W., and Cole, H., Rev. Mod. Phys., 36, 681 (1964).CrossRefGoogle Scholar
[3] Zegenhagen, J., Surf. Sci. Rep., 18 (7–8), 199 (1993).CrossRefGoogle Scholar
[4] Siebert, M., Schmidt, Th., Flege, J.I., Einfeldt, S., Figge, S., Hommel, D., and Falta, J., submitted to phys. stat. sol. (c).Google Scholar
[5] Kazimirov, A., Scherb, G., Zegenhagen, J., Lee, T.-L-, Bedzyk, M. J., Kelly, M. K., Angerer, H., and Ambacher, O., J. Appl. Phys. 84(3), 1703 (1998).CrossRefGoogle Scholar
[6] Bedzyk, M., Materlik, G., Phys. Rev. B 31, 4110 (1985).Google Scholar
[7] Schmidt, Th., Falta, J., Materlik, G., Zeysing, J., Falkenberg, G., and Johnson, R. L., Appl. Phys. Lett. 74, 1391 (1999).CrossRefGoogle Scholar